Backside cavity formation in semiconductor devices
First Claim
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1. A method for fabricating a radio-frequency device, the method comprising:
- providing a field-effect transistor formed over an oxide layer formed on a semiconductor substrate;
removing at least part of the semiconductor substrate to expose at least a portion of a backside of the oxide layer;
applying an interface material to the exposed at least a portion of the backside of the oxide layer;
removing at least a portion of the interface material to form a trench; and
covering at least a portion of the interface material and the trench with a substrate layer to form a cavity.
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Abstract
Fabrication of radio-frequency (RF) devices involves providing a field-effect transistor (FET) formed over an oxide layer formed on a semiconductor substrate, removing at least part of the semiconductor substrate to expose at least a portion of a backside of the oxide layer, applying an interface material to at least a portion of the backside of the oxide layer, removing at least a portion of the interface material to form a trench, and covering at least a portion of the interface material and the trench with a substrate layer to form a cavity.
41 Citations
20 Claims
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1. A method for fabricating a radio-frequency device, the method comprising:
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providing a field-effect transistor formed over an oxide layer formed on a semiconductor substrate; removing at least part of the semiconductor substrate to expose at least a portion of a backside of the oxide layer; applying an interface material to the exposed at least a portion of the backside of the oxide layer; removing at least a portion of the interface material to form a trench; and covering at least a portion of the interface material and the trench with a substrate layer to form a cavity. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A radio-frequency device comprising:
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a field-effect transistor implemented over an oxide layer; an interface layer applied to at least a portion of a backside of the oxide layer, the interface layer having a trench formed therein; and a substrate layer covering at least a portion of the interface layer and the trench to form a cavity. - View Dependent Claims (10, 11, 12, 13, 14)
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15. A wireless device comprising:
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a transceiver configured to process radio-frequency signals; an radio-frequency module in communication with the transceiver, the radio-frequency module including a switching device having a field-effect transistor implemented over an oxide layer, an interface layer applied to at least a portion of a backside of the oxide layer, the interface layer having a trench formed therein, and a substrate layer covering at least a portion of the interface layer and the trench to form a cavity; and an antenna in communication with the radio-frequency module, the antenna configured to facilitate transmitting and/or receiving of the radio-frequency signals. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification