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Cooling channels in 3DIC stacks

  • US 9,859,252 B2
  • Filed: 05/27/2016
  • Issued: 01/02/2018
  • Est. Priority Date: 11/13/2008
  • Status: Active Grant
First Claim
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1. An integrated circuit structure comprising:

  • a first die comprising;

    a semiconductor substrate;

    a dielectric pipe penetrating through the semiconductor substrate;

    a first portion of a fluidic channel in the dielectric pipe;

    an interconnect structure comprising;

    a plurality of dielectric layers; and

    a plurality of metal layers in the plurality of dielectric layers, wherein portions of the plurality of metal layers define a second portion of the fluidic channel, and a space of the fluidic channel is separated from dielectric materials of the plurality of dielectric layers by metal features of the plurality of metal layers; and

    two fluidic tubes connected to opposite ends of the fluidic channel.

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