Magnetic memory devices having a perpendicular magnetic tunnel junction

• US 9,859,333 B2
• Filed: 10/03/2016
• Issued: 01/02/2018
• Est. Priority Date: 08/02/2013
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Kim, Woojin, Kim, Ki Woong, Lim, Woo Chang
• Primary Examiner(s): Doan, Theresa T
• Application Number:
  US15/284,519
• Publication Number:
  US 20170025472A1
• Time in Patent Office: 456 Days
• Field of Search: 257421
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• CPC Class Codes: H01F 10/3204 Exchange coupling of amorphous multilayers
• CPC Class Codes: H01F 10/3254 the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
• CPC Class Codes: H01F 10/3286 Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
• CPC Class Codes: H10B 61/00 Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
• CPC Class Codes: H10B 61/10 comprising components having two electrodes, e.g. diodes or MIM elements
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: H10N 50/80 Constructional details
• CPC Class Codes: H10N 50/85 Magnetic active materials

Abstract

A magnetic memory device may include a free magnetic structure and a reference magnetic structure that are separated from each other by a tunnel barrier. The free magnetic structure may include an exchange-coupling layer, and first and second free layers that are separated from each other by the exchange-coupling layer. The first free layer may be provided between the second free layer and the tunnel barrier. A thickness of the first free layer may be greater than a first maximum anisotropy thickness, being the thickness at which the first free layer has maximum perpendicular anisotropy. A thickness of the second free layer may be smaller than a second maximum anisotropy thickness, being the thickness at which the second free layer has maximum perpendicular anisotropy. A magnetic tunnel junction having two free layers with different thicknesses can enable a magnetic memory device that has increased MR ratio and reduced switching current.

Claims

1. A magnetic memory device, comprising:

a tunnel barrier on a substrate;

a free magnetic structure; and

a reference magnetic structure spaced apart from the free magnetic structure and arranged on an opposite side of the tunnel barrier,

wherein the free magnetic structure comprises;

a first free layer and a second free layer spaced apart from each other on opposite sides of an exchange-coupling layer, the first and second free layers having an interface perpendicular magnetic anisotropy; and

a perpendicular magnetization enhancement layer being in contact with the second free layer and being spaced apart from the exchange-coupling layer on an opposite side of the second free layer, and

wherein the second free layer is thinner than the first free layer,

wherein the perpendicular magnetization enhancement layer comprises at least one portion having an amorphous structure.

2. The magnetic memory device of claim 1, wherein the perpendicular magnetization enhancement layer is thinner than the tunnel barrier.

3. The magnetic memory device of claim 1, wherein an RA value of the perpendicular magnetization enhancement layer is less than that of the tunnel barrier.

4. The magnetic memory device of claim 1, wherein the perpendicular magnetization enhancement layer comprises metal oxide.

5. The magnetic memory device of claim 1, wherein a thickness of the first free layer is greater than a first maximum anisotropy thickness, the first maximum anisotropy thickness being the thickness at which the first free layer has a maximum perpendicular anisotropy, and is less than a maximum thickness at which the first free layer no longer has perpendicular magnetization, thereby allowing the first free layer to have perpendicular magnetization.

6. The magnetic memory device of claim 1, wherein a thickness of the second free layer is greater than a minimum thickness below which the second free layer does not have perpendicular magnetization, thereby allowing the second free layer to have perpendicular magnetization, and is less than a second maximum anisotropy thickness, the second maximum anisotropy thickness being the thickness at which the second free layer has a maximum perpendicular anisotropy.

7. A magnetic memory device, comprising:

a tunnel barrier on a substrate; and

a free magnetic structure and a reference magnetic structure separated from each other by the tunnel barrier,

wherein the free magnetic structure comprises;

a first free layer and a second free layer separated from each other by an exchange-coupling layer; and

a perpendicular magnetization enhancement layer being in contact with the second free layer and being separated from the exchange-coupling layer by the second free layer,

wherein each of the perpendicular magnetization enhancement layer and the second free layer comprise at least one portion having an amorphous structure,

wherein the first free layer has a BCC structure, and the tunnel barrier has a NaCl structure.

8. The magnetic memory device of claim 7, wherein the perpendicular magnetization enhancement layer is thinner than the tunnel barrier, and the perpendicular magnetization enhancement layer comprises metal oxide.

9. The magnetic memory device of claim 7, wherein a thickness of the first free layer is greater than a first maximum anisotropy thickness and is smaller than a maximum thickness, allowing the first free layer to have perpendicular magnetization.

10. The magnetic memory device of claim 7, wherein a thickness of the second free layer is greater than a minimum thickness, allowing the second free layer to have perpendicular magnetization, and is smaller than a second maximum anisotropy thickness.

11. The magnetic memory device of claim 7, wherein the exchange-coupling layer comprises at least one of Ta, W, Nb, Ru, Ti, Cr, V, Mo, or Re.

12. A magnetic memory device, comprising:

a free magnetic structure comprising;

a first free layer and a second free layer separated from each other by an exchange-coupling layer, wherein the first and second free layers have an interface perpendicular magnetic anisotropy; and

a perpendicular magnetization enhancement layer arranged in contact with the second free layer and being spaced apart from the exchange-coupling layer on an opposite side of the second free layer, wherein the second free layer is thinner than the first free layer;

a tunnel barrier on a substrate; and

a reference magnetic structure separated from the free magnetic structure by the tunnel barrier,

wherein a thickness of the first free layer is greater than a first maximum anisotropy thickness at which the first free layer has a maximum perpendicular anisotropy, and is less than a maximum thickness at which the first free layer no longer has perpendicular magnetization.

13. The magnetic memory device of claim 12, wherein a thickness of the second free layer is greater than a minimum thickness below which the second free layer does not have perpendicular magnetization and above which the second free layer does have perpendicular magnetization, and wherein the thickness of the second free layer is smaller than a second maximum anisotropy thickness at which the second free layer has a maximum perpendicular anisotropy.