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Magnetic memory devices having a perpendicular magnetic tunnel junction

  • US 9,859,333 B2
  • Filed: 10/03/2016
  • Issued: 01/02/2018
  • Est. Priority Date: 08/02/2013
  • Status: Active Grant
First Claim
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1. A magnetic memory device, comprising:

  • a tunnel barrier on a substrate;

    a free magnetic structure; and

    a reference magnetic structure spaced apart from the free magnetic structure and arranged on an opposite side of the tunnel barrier,wherein the free magnetic structure comprises;

    a first free layer and a second free layer spaced apart from each other on opposite sides of an exchange-coupling layer, the first and second free layers having an interface perpendicular magnetic anisotropy; and

    a perpendicular magnetization enhancement layer being in contact with the second free layer and being spaced apart from the exchange-coupling layer on an opposite side of the second free layer, andwherein the second free layer is thinner than the first free layer,wherein the perpendicular magnetization enhancement layer comprises at least one portion having an amorphous structure.

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