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Schottky diode with reduced forward voltage

  • US 9,859,383 B2
  • Filed: 11/20/2014
  • Issued: 01/02/2018
  • Est. Priority Date: 11/26/2013
  • Status: Active Grant
First Claim
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1. A semiconductor component, comprising:

  • a semiconductor body of a first conduction type that comprises a drift zone; and

    a metal layer on the semiconductor body, wherein the metal layer forms with the semiconductor body a Schottky contact along a contact surface,wherein a doping concentration of the first conduction type on the contact surface varies along a direction of the contact surface in such a way as to define a multiplicity of more heavily doped regions spaced apart from one another along the contact surface by a plurality of more weakly doped regions, wherein the multiplicity of more heavily doped regions have heavier doping than the drift zone of the semiconductor component and the plurality of more weakly doped regions, wherein both the more weakly doped regions and the more heavily doped regions have an excess of free charge carriers of the first conduction type.

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