Schottky diode with reduced forward voltage
First Claim
Patent Images
1. A semiconductor component, comprising:
- a semiconductor body of a first conduction type that comprises a drift zone; and
a metal layer on the semiconductor body, wherein the metal layer forms with the semiconductor body a Schottky contact along a contact surface,wherein a doping concentration of the first conduction type on the contact surface varies along a direction of the contact surface in such a way as to define a multiplicity of more heavily doped regions spaced apart from one another along the contact surface by a plurality of more weakly doped regions, wherein the multiplicity of more heavily doped regions have heavier doping than the drift zone of the semiconductor component and the plurality of more weakly doped regions, wherein both the more weakly doped regions and the more heavily doped regions have an excess of free charge carriers of the first conduction type.
1 Assignment
0 Petitions
Accused Products
Abstract
A semiconductor component includes a semiconductor body of a first conduction type and a metal layer on the semiconductor body, wherein the metal layer forms with the semiconductor body a Schottky contact along a contact surface. A doping concentration of the first conduction type on the contact surface varies along a direction of the contact surface.
-
Citations
17 Claims
-
1. A semiconductor component, comprising:
-
a semiconductor body of a first conduction type that comprises a drift zone; and a metal layer on the semiconductor body, wherein the metal layer forms with the semiconductor body a Schottky contact along a contact surface, wherein a doping concentration of the first conduction type on the contact surface varies along a direction of the contact surface in such a way as to define a multiplicity of more heavily doped regions spaced apart from one another along the contact surface by a plurality of more weakly doped regions, wherein the multiplicity of more heavily doped regions have heavier doping than the drift zone of the semiconductor component and the plurality of more weakly doped regions, wherein both the more weakly doped regions and the more heavily doped regions have an excess of free charge carriers of the first conduction type. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
-
-
12. A semiconductor component, comprising:
-
a semiconductor body of a first conduction type; a metal layer on the semiconductor body, wherein the metal layer forms with the semiconductor body a Schottky contact along a contact surface; at least one region of a second conduction type on the contact surface, and a plurality of regions with increased doping concentration of the first conduction type spaced apart from one another along the contact surface by a plurality of regions with decreased doping concentration, in which the doping concentration of the plurality of regions with increased doping concentration is greater than a doping concentration of the semiconductor body and a doping concentration of the regions with decreased doping concentration, wherein both the plurality of regions with increased doping concentration and the plurality of regions with decreased doping concentration have an excess of free charge carriers of the first conduction type. - View Dependent Claims (13, 14, 15, 16)
-
-
17. A semiconductor component, comprising:
-
a semiconductor body of a first conduction type that comprises a drift zone; and a metal layer on the semiconductor body, wherein the metal layer forms with the semiconductor body a Schottky contact along a contact surface, wherein a doping concentration of the first conduction type along the contact surface is greater than an underlying portion of the drift zone, and wherein the dopant concentration along the contact surface varies along a direction of the contact surface, and wherein the doping concentration along the direction of the contact surface varies in such a way as to define a multiplicity of more heavily doped regions, which have heavier doping than neighboring regions at the contact surface and have heavier doping than the drift zone of the semiconductor component, wherein both the more heavily doped regions and the neighboring regions have an excess of free charge carriers of the first conduction type.
-
Specification