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Semiconductor device and method for manufacturing the same

  • US 9,859,441 B2
  • Filed: 08/05/2016
  • Issued: 01/02/2018
  • Est. Priority Date: 07/31/2008
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a gate electrode comprising copper over a substrate having an insulating surface;

    a first insulating film comprising silicon nitride over the gate electrode;

    a second insulating film over and in contact with the first insulating film, the second insulating film comprising silicon oxide;

    an oxide semiconductor layer over the second insulating film;

    a third insulating film over the oxide semiconductor layer;

    a conductive film comprising titanium over the oxide semiconductor layer,a fourth insulating layer over the conductive film, the fourth insulating layer comprising silicon oxide;

    a fifth insulating layer over the fourth insulating layer, the fifth insulating layer comprising silicon nitride;

    a sixth insulating layer over the fifth insulating layer, the sixth insulating layer comprising an organic material; and

    a pixel electrode electrically connected to the conductive film,wherein a thickness of the oxide semiconductor layer in a first region in which the oxide semiconductor layer and the conductive film are in contact with each other is smaller than a thickness of the oxide semiconductor layer in a second region in which the oxide semiconductor layer and the third insulating film are in contact with each other and overlap with at least part of the gate electrode, andwherein the conductive film is in contact with the first region of the oxide semiconductor layer and part of a top surface of the third insulating film.

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