Semiconductor device, display device, input/output device, and electronic device
First Claim
1. A semiconductor device comprising:
- an oxide semiconductor film;
a gate electrode; and
a gate insulating film between the oxide semiconductor film and the gate electrode,wherein the gate insulating film has a side region that is more on the inside than at least part of a side of the gate electrode.
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Accused Products
Abstract
A self-aligned transistor including an oxide semiconductor film, which has excellent and stable electrical characteristics, is provided. A semiconductor device is provided with a transistor that includes an oxide semiconductor film, a gate electrode overlapping with part of the oxide semiconductor film, and a gate insulating film between the oxide semiconductor film and the gate electrode. The oxide semiconductor film includes a first region and second regions between which the first region is positioned. The second regions include an impurity element. A side of the gate insulating film has a depressed region. Part of the gate electrode overlaps with parts of the second regions in the oxide semiconductor film.
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Citations
29 Claims
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1. A semiconductor device comprising:
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an oxide semiconductor film; a gate electrode; and a gate insulating film between the oxide semiconductor film and the gate electrode, wherein the gate insulating film has a side region that is more on the inside than at least part of a side of the gate electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 24, 25, 26)
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13. A semiconductor device comprising:
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an oxide semiconductor film; a gate electrode comprising a first conductive film and a second conductive film over the first conductive film; and a gate insulating film between the oxide semiconductor film and the gate electrode, wherein the gate insulating film has a side region that is more on the inside than at least part of a side of the first conductive film. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 27, 28, 29)
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Specification