Light emitting diode for surface mount technology, method of manufacturing the same, and method of manufacturing light emitting diode module
DCFirst Claim
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1. A light emitting diode (LED), comprising:
- a substrate;
a first semiconductor layer disposed on the substrate;
an active layer disposed on a portion of the first semiconductor layer;
a second semiconductor layer disposed on the active layer;
a first conductive layer disposed on a portion of the first semiconductor layer;
a second conductive layer disposed on the second semiconductor layer; and
an insulating layer overlapping the first semiconductor layer, the second semiconductor layer, and the second conductive layer,wherein;
the insulating layer has a first region having different thicknesses and a second region having a substantially constant thickness; and
the thickness of the first region varies along a direction extending across the second semiconductor layer.
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Abstract
A light emitting diode (LED) includes a substrate, a first semiconductor layer disposed on the substrate, an active layer disposed on a portion of the first semiconductor layer, a second semiconductor layer disposed on the active layer, a first conductive layer disposed on a portion of the first semiconductor layer, a second conductive layer disposed on the second semiconductor layer, and an insulating layer overlapping the first semiconductor layer, the second semiconductor layer, and the reflection pattern, in which the insulating layer has a first region having different thicknesses and a second region having a substantially constant thickness.
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Citations
27 Claims
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1. A light emitting diode (LED), comprising:
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a substrate; a first semiconductor layer disposed on the substrate; an active layer disposed on a portion of the first semiconductor layer; a second semiconductor layer disposed on the active layer; a first conductive layer disposed on a portion of the first semiconductor layer; a second conductive layer disposed on the second semiconductor layer; and an insulating layer overlapping the first semiconductor layer, the second semiconductor layer, and the second conductive layer, wherein; the insulating layer has a first region having different thicknesses and a second region having a substantially constant thickness; and the thickness of the first region varies along a direction extending across the second semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A light emitting diode (LED), comprising:
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a substrate; a first semiconductor layer disposed on the substrate; an active layer disposed on a portion of the first semiconductor layer; a second semiconductor layer disposed on the active layer; a first conductive layer disposed on a portion of the first semiconductor layer; a second conductive layer disposed on the second semiconductor layer; and an insulating layer overlapping the first semiconductor layer, the second semiconductor layer, and the second conductive layer, wherein; the insulating layer has a first region having different thicknesses and a second region having a substantially constant thickness; and the thickness of the first region varies from a maximum thickness adjacent the ends of the second semiconductor layer to a minimum thickness adjacent the middle of the second semiconductor layer. - View Dependent Claims (13)
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14. A light emitting diode (LED), comprising:
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a substrate; a first semiconductor layer disposed on the substrate; an active layer disposed on a portion of the first semiconductor layer; a second semiconductor layer disposed on the active layer; a first conductive layer disposed on a portion of the first semiconductor layer; a second conductive layer disposed on the second semiconductor layer; and an insulating layer overlapping the first semiconductor layer, the second semiconductor layer, and the second conductive layer, wherein; the insulating layer has a first region having different thicknesses and a second region having a substantially constant thickness; and the first region comprises; a first thickness adjacent to each end of the second semiconductor layer; a second thickness adjacent to the middle of the second semiconductor layer; and a third thickness between the first and second thicknesses that gradually varies between the first and second thicknesses.
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15. A light emitting diode (LED), comprising:
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a first semiconductor layer; a mesa disposed on the first semiconductor layer, the mesa comprising an active layer and a second semiconductor layer; a first conductive layer disposed on the mesa, the first conductive layer comprising a first n-contact region and a second n-contact region spaced apart from each other by the mesa and configured to be in ohmic-contact with an upper surface of the first semiconductor layer; a second conductive layer disposed on the second semiconductor layer; a lower insulating layer disposed between the mesa and the first conductive layer, the lower insulating layer configured to insulate the first conductive layer from the mesa; and an upper insulating layer covering the first conductive layer, the upper insulating layer comprising a first hole disposed between the first and second n-contact regions and exposing a first portion of the lower insulating layer. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27)
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Specification