Integrated circuit having first and second magnetic field sensing elements
First Claim
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1. An integrated circuit, comprising:
- a first magnetic field sensing element for providing a first sensitivity to a magnetic field;
a second magnetic field sensing element for providing a selected second different sensitivity to the magnetic field; and
a circuit coupled to the first and second magnetic field sensing elements, operable to provide the integrated circuit with a first operating range responsive to the first magnetic field sensing element and a second selected different operating range responsive to the second magnetic field sensing element, wherein the first and second magnetic field sensing elements are different types of magnetic field sensing elements, wherein the different types of magnetic field sensing elements are two different types in a group of types of magnetic field sensing elements comprising a planar Hall effect element, a vertical Hall effect element, a giant magnetoresistance (GMR) element, an anisotropic magnetoresistance (AMR) element, and a tunneling magnetoresistance (TMR) element.
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Abstract
An integrated circuit can have a first substrate supporting a magnetic field sensing element and a second substrate supporting another magnetic field sensing element. The first and second substrates can be arranged in a variety of configurations. Another integrated circuit can have a first magnetic field sensing element and second different magnetic field sensing element disposed on surfaces thereof.
157 Citations
25 Claims
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1. An integrated circuit, comprising:
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a first magnetic field sensing element for providing a first sensitivity to a magnetic field; a second magnetic field sensing element for providing a selected second different sensitivity to the magnetic field; and a circuit coupled to the first and second magnetic field sensing elements, operable to provide the integrated circuit with a first operating range responsive to the first magnetic field sensing element and a second selected different operating range responsive to the second magnetic field sensing element, wherein the first and second magnetic field sensing elements are different types of magnetic field sensing elements, wherein the different types of magnetic field sensing elements are two different types in a group of types of magnetic field sensing elements comprising a planar Hall effect element, a vertical Hall effect element, a giant magnetoresistance (GMR) element, an anisotropic magnetoresistance (AMR) element, and a tunneling magnetoresistance (TMR) element. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. An integrated circuit, comprising:
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a substrate; a first magnetic field sensing element disposed on a surface of the substrate; a second magnetic field sensing element disposed on the surface of the substrate; and a circuit coupled to the first and second magnetic field sensing elements, the circuit operable to provide the integrated circuit with a first operating range responsive to the first magnetic field sensing element and a second selected different operating range responsive to the second magnetic field sensing element, wherein the second magnetic field sensing element has a different structure than the first magnetic field sensing element, wherein the first and second magnetic field sensing elements are different types of magnetic field sensing elements, wherein the different types of magnetic field sensing elements are two different types in a group of types of magnetic field sensing elements comprising a planar Hall effect element, a vertical Hall effect element, a giant magnetoresistance (GMR) element, an anisotropic magnetoresistance (AMR) element, and a tunneling magnetoresistance (TMR) element. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. An integrated circuit, comprising:
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a first magnetic field sensing element; a second magnetic field sensing element; a circuit coupled to the first and second magnetic field sensing elements, wherein the first and second magnetic field sensing elements are different types of magnetic field sensing elements, wherein the different types of magnetic field sensing elements are two different types in a group of types of magnetic field sensing elements comprising a planar Hall effect element, a vertical Hall effect element, a giant magnetoresistance (GMR) element, an anisotropic magnetoresistance (AMR) element, and a tunneling magnetoresistance (TMR) element; and a conductor, wherein the integrated circuit is adapted to be responsive to magnetic field generated by a current passing through the conductor. - View Dependent Claims (22, 23, 24, 25)
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Specification