Nanoparticle with plural functionalities, and method of forming the nanoparticle
First Claim
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1. A method of forming a nanoparticle, comprising:
- forming a layer of semiconductor material on a substrate;
forming a first layer on the semiconductor material, the first layer having a functionality different from a functionality of the semiconductor material;
patterning the layer of semiconductor material to form a pillar of the semiconductor material;
a first etch to form a plurality of strips of the semiconductor material;
a second etch to divide the plurality of strips into a plurality of pillars of the semiconductor material; and
separating the pillar from the substrate to form the nanoparticle.
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Abstract
A nanoparticle includes a cuboid base including a semiconductor material, and a plurality of surfaces formed on the base and including a plurality of functionalities, respectively.
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Citations
14 Claims
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1. A method of forming a nanoparticle, comprising:
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forming a layer of semiconductor material on a substrate; forming a first layer on the semiconductor material, the first layer having a functionality different from a functionality of the semiconductor material; patterning the layer of semiconductor material to form a pillar of the semiconductor material; a first etch to form a plurality of strips of the semiconductor material; a second etch to divide the plurality of strips into a plurality of pillars of the semiconductor material; and separating the pillar from the substrate to form the nanoparticle. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 13, 14)
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11. A method of forming a nanoparticle, comprising:
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forming a layer of semiconductor material on a buried oxide layer of a semiconductor-on-insulator (SOI) substrate; forming a first layer on the semiconductor material, the first layer having a functionality different from a functionality of the semiconductor material; patterning the layer of semiconductor material to form a pillar of the semiconductor material, the patterning of the layer of semiconductor material comprising; a first etch to form a plurality of strips of the semiconductor material; and a second etch to divide the plurality of strips into a plurality of pillars of the semiconductor material; and etching the buried oxide layer to separate the pillar from the buried oxide layer to form the nanoparticle. - View Dependent Claims (12)
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Specification