RF power amplifier splitter
First Claim
1. An integrated circuit radio frequency (RF) power amplifier splitter, comprising:
- a semiconductor substrate for supporting a plurality of layers of an integrated circuit;
a plurality of secondary windings configured in a 2D grid pattern wherein each secondary winding is adjacent two other secondary windings;
a primary winding that is routed around said plurality of secondary windings and is magnetically coupled to said plurality of secondary windings; and
wherein an RF input signal applied to said primary winding is split into a plurality of differential RF output signals at the terminals of said secondary windings.
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Accused Products
Abstract
A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, Bluetooth, ZigBee, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard CMOS processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.
14 Citations
24 Claims
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1. An integrated circuit radio frequency (RF) power amplifier splitter, comprising:
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a semiconductor substrate for supporting a plurality of layers of an integrated circuit; a plurality of secondary windings configured in a 2D grid pattern wherein each secondary winding is adjacent two other secondary windings; a primary winding that is routed around said plurality of secondary windings and is magnetically coupled to said plurality of secondary windings; and wherein an RF input signal applied to said primary winding is split into a plurality of differential RF output signals at the terminals of said secondary windings. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 19, 22, 23, 24)
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9. An integrated circuit radio frequency (RF) power amplifier splitter, comprising:
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a semiconductor substrate for supporting a plurality of layers of an integrated circuit; a plurality of secondary windings configured in a linear array pattern; a primary winding that is routed around said plurality of secondary windings and is magnetically coupled to said plurality of secondary windings; and wherein an RF input signal applied to said primary winding is split into a plurality of differential RF output signals at the terminals of said secondary windings. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17, 18, 20)
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21. An integrated circuit radio frequency (RF) power amplifier splitter, comprising:
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a semiconductor substrate for supporting a plurality of layers of an integrated circuit; a plurality of secondary windings configured in a linear array pattern; a primary winding that is routed around said plurality of secondary windings and is magnetically coupled to said plurality of secondary windings; and wherein an RF input signal applied to said primary winding is split into a plurality of differential RF output signals at the terminals of said secondary windings.
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Specification