Semiconductor DBR, semiconductor light-emitting device, solid-state laser, photoacoustic apparatus, image-forming apparatus, and method for manufacturing semiconductor DBR
First Claim
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1. A semiconductor distributed Bragg reflector (DBR) comprising:
- a first multilayer structure includinga plurality of first semiconductor layers andone or more second semiconductor layers each interposed between a corresponding pair of the plurality of first semiconductor layers;
a second multilayer structure includinga plurality of third semiconductor layers andone or more second semiconductor layers each interposed between a corresponding pair of the plurality of third semiconductor layers; and
a protection layer interposed between the first multilayer structure and the second multilayer structure,wherein,the second semiconductor layer has a lower decomposition temperature than the first semiconductor layer,the third semiconductor layer has a lower decomposition temperature than the second semiconductor layer,the semiconductor DBR has a peak reflectance at a wavelength λ
,the plurality of first semiconductor layers, the one or more second semiconductor layers, and the plurality of third semiconductor layers each have an optical thickness of nλ
/4, where n is an odd number of 1 or more,the protection layer has an optical thickness of mλ
/2, where m is a natural number of 1 or more, anda portion of the protection layer at which the protection layer is brought into contact with the second multilayer structure includes a material having a higher decomposition temperature than the third semiconductor layer,wherein a conductivity type of the first multilayer structure and a conductivity type of the second multilayer structure are the same as each other.
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Abstract
A semiconductor distributed Bragg reflector (DBR) including a first multilayer structure including a plurality of first semiconductor layers and one or more second semiconductor layers each interposed between a corresponding pair of the plurality of first semiconductor layers; a second multilayer structure including a plurality of third semiconductor layers and one or more second semiconductor layers each interposed between a corresponding pair of the plurality of third semiconductor layers; and a protection layer interposed between the first multilayer structure and the second multilayer structure. The second semiconductor layer has a lower decomposition temperature than the first semiconductor layer. The third semiconductor layer has a lower decomposition temperature than the second semiconductor layer.
6 Citations
15 Claims
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1. A semiconductor distributed Bragg reflector (DBR) comprising:
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a first multilayer structure including a plurality of first semiconductor layers and one or more second semiconductor layers each interposed between a corresponding pair of the plurality of first semiconductor layers; a second multilayer structure including a plurality of third semiconductor layers and one or more second semiconductor layers each interposed between a corresponding pair of the plurality of third semiconductor layers; and a protection layer interposed between the first multilayer structure and the second multilayer structure, wherein, the second semiconductor layer has a lower decomposition temperature than the first semiconductor layer, the third semiconductor layer has a lower decomposition temperature than the second semiconductor layer, the semiconductor DBR has a peak reflectance at a wavelength λ
,the plurality of first semiconductor layers, the one or more second semiconductor layers, and the plurality of third semiconductor layers each have an optical thickness of nλ
/4, where n is an odd number of 1 or more,the protection layer has an optical thickness of mλ
/2, where m is a natural number of 1 or more, anda portion of the protection layer at which the protection layer is brought into contact with the second multilayer structure includes a material having a higher decomposition temperature than the third semiconductor layer, wherein a conductivity type of the first multilayer structure and a conductivity type of the second multilayer structure are the same as each other. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor DBR comprising:
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a first semiconductor layer; a second semiconductor layer having a lower decomposition temperature than the first semiconductor layer; and a third semiconductor layer having a lower decomposition temperature than the second semiconductor layer, wherein, a portion of the semiconductor DBR has a structure in which the third semiconductor layer, the second semiconductor layer, the third semiconductor layer, the second semiconductor layer, the first semiconductor layer,the second semiconductor layer, and the first semiconductor layer are stacked in order, in the structure, the thickness of the second semiconductor layer interposed between the third semiconductor layers is different from the thickness of the second semiconductor layer interposed between the first semiconductor layer and third semiconductor layer, and in the structure, the thickness of the second semiconductor layer interposed between the first semiconductor layers is different from the thickness of the second semiconductor layer interposed between the first semiconductor layer and third semiconductor layer, wherein a conductivity type of the first multilayer structure and a conductivity type of the second multilayer structure are the same as each other. - View Dependent Claims (12, 13, 14, 15)
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Specification
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Current AssigneeCanon Kabushiki Kaisha (Canon Inc.)
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Original AssigneeCanon Kabushiki Kaisha (Canon Inc.)
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InventorsKawashima, Takeshi
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Primary Examiner(s)Song, Matthew
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Application NumberUS14/307,328Publication NumberTime in Patent Office1,302 DaysField of SearchUS Class CurrentCPC Class CodesG01N 21/1702 with opto-acoustic detectio...G02B 1/14 Protective coatings, e.g. h...G03G 15/04072 by laserH01L 33/10 with a light reflecting str...H01L 33/105 with a resonant cavity stru...H01L 33/46 Reflective coating, e.g. di...H01S 2304/04 MOCVD or MOVPEH01S 3/0941 of a laser diodeH01S 3/1633 BeAl2O4, i.e. ChrysoberylH01S 5/18308 having a special structure ...H01S 5/18358 containing spacer layers to...H01S 5/18361 Structure of the reflectors...H01S 5/187 using Bragg reflectionH01S 5/3063 using MgH01S 5/3201 incorporating bulkstrain ef...H01S 5/34333 with a well layer based on ...H01S 5/423 having a vertical cavityH10K 50/852 comprising a resonant cavit...
