×

Integrated photonics including germanium

  • US 9,864,138 B2
  • Filed: 01/04/2016
  • Issued: 01/09/2018
  • Est. Priority Date: 01/05/2015
  • Status: Active Grant
First Claim
Patent Images

1. A method of fabricating a photodetector structure comprising:

  • forming dielectric material over silicon;

    etching a trench in the dielectric material extending to the silicon;

    epitaxially growing germanium within the trench;

    annealing germanium formed by the epitaxially growing;

    repeating the epitaxially growing and the annealing until the germanium overfills the trench;

    planarizing an overfill portion of the germanium; and

    creating top and bottom contacts using doping and metallization, wherein the method is performed so that the top contact is in contact with the germanium, wherein the method includes forming a reduced area top doping region in the germanium having an area smaller than an area of a top of the germanium in which the top doping region is formed, and wherein the method is performed so that an entirety of a perimeter of the top doping region is spaced apart inward from a perimeter of the germanium defined at a top of the germanium.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×