RF impedance matching network

• US 9,865,432 B1
• Filed: 02/09/2015
• Issued: 01/09/2018
• Est. Priority Date: 01/10/2014
• Status: Active Grant

• Current Assignee: ASM America Incorporated (ASM International NV)
• Original Assignee: Reno Technologies Inc.
• Inventors: Bhutta, Imran Ahmed
• Primary Examiner(s): Vinh, Lan
• Application Number:
  US14/616,884
• Time in Patent Office: 1,065 Days
• Field of Search: 438706, 438710, 438712, 438714, 438725, 15634544, 156345, 156 48, 15634538
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32183 Matching circuits
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/31138 by dry-etching
• CPC Class Codes: H01L 21/32136 using plasmas
• CPC Class Codes: H01L 21/67069 for drying etching
• CPC Class Codes: H03H 7/40 Automatic matching of load impedance to source impedance

Abstract

An RF impedance matching network includes an RF input configured to operably couple to an RF source, the RF source having a fixed RF source impedance; an RF output configured to operably couple to a plasma chamber, the plasma chamber having a variable plasma impedance; a series EVC; a shunt EVC; an RF input sensor; and a control circuit configured to: determine an input impedance; determine the plasma impedance; determine a first capacitance value for the series variable capacitance and a second capacitance value for the shunt variable capacitance, the determination of the first capacitance value and the second capacitance value based on the plasma impedance and the RF source impedance; generate a control signal to alter at least one of the series variable capacitance and the shunt variable capacitance to the first capacitance value and the second capacitance value, respectively.

Claims

1. An RF impedance matching network comprising:

an RF input configured to operably couple to an RF source, the RF source having a fixed RF source impedance;

an RF output configured to operably couple to a plasma chamber, the plasma chamber having a variable plasma impedance;

a first electronically variable capacitor (“

first EVC”

) having a first variable capacitance, the first EVC electrically coupled between the RF input and the RF output;

a second electronically variable capacitor (“

second EVC”

) having a second variable capacitance, the second EVC electrically coupled between a ground and one of the RF input and the RF output;

an RF input sensor operably coupled to the RF input, the RF input sensor configured to detect an RF input parameter at the RF input; and

a control circuit operatively coupled to the first EVC and to the second EVC to control the first variable capacitance and the second variable capacitance, wherein the control circuit is configured to;

determine an input impedance at the RF input, the input impedance determination based on the RF input parameter;

calculate the plasma impedance based on the RF input impedance;

determine a first capacitance value for the first variable capacitance and a second capacitance value for the second variable capacitance, the determination of the first capacitance value and the second capacitance value based on the calculated plasma impedance and the RF source impedance; and

generate a control signal to alter at least one of the first variable capacitance and the second variable capacitance to the first capacitance value and the second capacitance value, respectively.

2. The RF impedance matching network of claim 1, wherein the plasma impedance determination is further based on the first variable capacitance and the second variable capacitance.

3. The RF impedance matching network of claim 1 further comprising:

an RF output sensor operably coupled to the RF output, the RF output sensor configured to detect an RF output parameter;

wherein the plasma impedance determination is based on the RF output parameter detected by the RF output sensor.

4. The RF impedance matching network of claim 1, wherein the RF input parameter is one of a voltage, a current, or a phase at the RF input.

5. The RF impedance matching network of claim 1, wherein an elapsed time between calculating the plasma impedance to when RF power reflected back to the RF source decreases is less than about 150 μ

sec.

6. The RF impedance matching network of claim 1, wherein the control circuit is configured to repeat the steps of determining the input impedance, calculating the plasma impedance, determining the first and second capacitance values, and generating the control signal to create an impedance match at the RF input.

7. The RF impedance matching network of claim 6, wherein the impedance match is created in about 500 μ

sec or less.

8. The RF impedance matching network of claim 1, further comprising:

a first driver circuit operatively coupled between the control circuit and the first EVC, the first driver circuit being configured to alter the first variable capacitance based upon the control signal received from the control circuit; and

a second driver circuit operatively coupled between the control circuit and the second EVC, the second driver circuit being configured to alter the second variable capacitance based upon the control signal received from the control circuit.

9. The RF impedance matching network of claim 8, further comprising:

a first RF filter operatively coupled between the first EVC and the first driver circuit; and

a second RF filter operatively coupled between the second EVC and the second driver circuit.

10. The RF impedance matching network of claim 8,

wherein each of the first driver circuit and the second driver circuit are configured to switch a high voltage source on or off in less than 15 μ

sec, the high voltage source controlling electronic switches of each of the first and second EVCs for purposes of altering the respective first and second variable capacitances, and the high voltage source having a high voltage greater than an RF voltage of the RF source.

11. The RF impedance matching network of claim 8,

wherein each of the first driver circuit and the second driver circuit are configured to switch on a high voltage source in approximately 11 μ

sec, the high voltage source powering electronic switches of each of the first and second EVCs for purposes of altering the respective first and second variable capacitances, and the high voltage source having a high voltage greater than an RF voltage of the RF source.

12. The RF impedance matching network of claim 8, wherein each of the first driver circuit and the second driver circuit are configured to switch off a high voltage source in approximately 9 μ

sec, the high voltage source powering electronic switches of each of the EVCs for purposes of altering the respective first and second variable capacitances, and the high voltage source having a high voltage greater than an RF voltage of the RF source.

13. A method of matching an impedance comprising:

operably coupling an RF input to an RF source, the RF source having a fixed RF source impedance;

operably coupling an RF output to a plasma chamber, the plasma chamber having a variable plasma impedance;

operably coupling a first electronically variable capacitor (“

first EVC”

) between the RF input and the RF output, the first EVC having a first variable capacitance;

operably coupling a second electronically variable capacitor (“

second EVC”

) between the RF input and the RF output, the second EVC having a second variable capacitance;

operably coupling an RF input sensor to the RF input, the RF input sensor configured to detect an RF input parameter at the RF input; and

determining an input impedance at the RF input, the input impedance determination based on the RF input parameter;

calculating the plasma impedance based on the RF input impedance;

determining a first capacitance value for the first variable capacitance and a second capacitance value for the second variable capacitance, the determination of the first capacitance value and the second capacitance value based on the calculated plasma impedance and the RF source impedance; and

altering at least one of the first variable capacitance and the second variable capacitance to the first capacitance value and the second capacitance value, respectively.

14. The method of claim 13, wherein the plasma impedance determination is further based on the first variable capacitance and the second variable capacitance.

15. The method of claim 13 further comprising:

an RF output sensor operably coupled to the RF output, the RF output sensor configured to detect an RF output parameter;

wherein the plasma impedance determination is based on the RF output parameter detected by the RF output sensor.

16. The method of claim 13, wherein the RF input parameter is one of a voltage, a current, or a phase at the RF input.

17. A method of manufacturing a semiconductor comprising:

placing a substrate in a plasma chamber configured to deposit a material layer onto the substrate or etch a material layer from the substrate; and

energizing plasma within the plasma chamber by coupling RF power from an RF source into the plasma chamber to perform a deposition or etching, and while energizing the plasma;

providing an RF matching network between the plasma chamber and the RF source, the RF matching network comprising;

an RF input;

an RF output;

a first electronically variable capacitor (“

first EVC”

) having a first variable capacitance, the first EVC electrically coupled between the RF input and the RF output; and

a second electronically variable capacitor (“

second EVC”

) having a second variable capacitance, the second EVC electrically coupled between the RF input and the RF output;

operably coupling the RF input to the RF source, the RF source having a fixed RF source impedance;

operably coupling the RF output to a plasma chamber, the plasma chamber having a variable plasma impedance;

operably coupling an RF input sensor to the RF input, the RF input sensor configured to detect a RF input parameter at the RF input; and

determining an input impedance at the RF input, the input impedance determination based on the RF input parameter;

calculating the plasma impedance based on the RF input impedance;

determining a first capacitance value for the first variable capacitance and a second capacitance value for the second variable capacitance, the determination of the first capacitance value and the second capacitance value based on the calculated plasma impedance and the RF source impedance; and

altering at least one of the first variable capacitance and the second variable capacitance to the first capacitance value and the second capacitance value, respectively.

18. The method of claim 17, wherein the plasma impedance determination is further based on the first variable capacitance and the second variable capacitance.

19. The method of claim 17 further comprising:

an RF output sensor operably coupled to the RF output, the RF output sensor configured to detect an RF output parameter;

wherein the plasma impedance determination is based on the RF output parameter detected by the RF output sensor.

20. The method of claim 17, wherein the RF input parameter is one of a voltage, a current, or a phase at the RF input.