Semiconductor device and electronic device
First Claim
1. A semiconductor device comprising:
- a first circuit;
a second circuit;
a first wiring;
a second wiring;
a third wiring; and
a fourth wiring;
wherein the first circuit includes a plurality of transistors,wherein the second circuit has a function of protecting the first circuit,wherein the second circuit comprises;
a first transistor,a first diode,a second diode, anda fourth transistor,wherein the first wiring is electrically connected to the first circuit via the second circuit,wherein the first wiring is has a function of inputting a signal,wherein the second wiring is electrically connected to the first circuit,wherein the second wiring is electrically connected to one of a source electrode and a drain electrode of the first transistor,wherein the third wiring is electrically connected to a gate electrode of the first transistor,wherein the fourth wiring is electrically connected to the other of the source electrode and the drain electrode of the first transistor,wherein the first transistor includes an oxide semiconductor film, andwherein the fourth transistor has a lower off current than the first transistor.
1 Assignment
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Accused Products
Abstract
A semiconductor device that is hardly broken is provided. Alternatively, a semiconductor device having high reliability is provided. The semiconductor device includes a first circuit, a second circuit, a first wiring, a second wiring, and a third wiring. The second circuit has a function of protecting the first circuit. The second circuit includes a first transistor including an oxide semiconductor film. The first wiring is electrically connected to the first circuit through the second circuit. The first wiring is electrically connected to the first circuit through the second circuit. The first wiring has a function of inputting a signal. The second wiring is electrically connected to the first circuit. The second wiring is electrically connected to one of a source electrode and a drain electrode of the first transistor. The third wiring is electrically connected to a gate electrode of the first transistor included in the second circuit.
107 Citations
16 Claims
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1. A semiconductor device comprising:
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a first circuit; a second circuit; a first wiring; a second wiring; a third wiring; and a fourth wiring; wherein the first circuit includes a plurality of transistors, wherein the second circuit has a function of protecting the first circuit, wherein the second circuit comprises; a first transistor, a first diode, a second diode, and a fourth transistor, wherein the first wiring is electrically connected to the first circuit via the second circuit, wherein the first wiring is has a function of inputting a signal, wherein the second wiring is electrically connected to the first circuit, wherein the second wiring is electrically connected to one of a source electrode and a drain electrode of the first transistor, wherein the third wiring is electrically connected to a gate electrode of the first transistor, wherein the fourth wiring is electrically connected to the other of the source electrode and the drain electrode of the first transistor, wherein the first transistor includes an oxide semiconductor film, and wherein the fourth transistor has a lower off current than the first transistor. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor device comprising:
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a first circuit; a second circuit; a first wiring; a second wiring; a third wiring; and a fourth wiring, wherein the first circuit includes a plurality of transistors, wherein the second circuit has a function of protecting the first circuit, wherein the second circuit includes a first transistor, a second transistor, a third transistor, and a fourth transistor, wherein the first wiring is electrically connected to the first circuit through the second circuit, wherein the first wiring has a function of inputting a signal, wherein the second wiring is electrically connected to the first circuit, wherein the third wiring is electrically connected to a gate electrode of the first transistor included in the second circuit, wherein one of a source electrode and a drain electrode of the first transistor is electrically connected to the second wiring, wherein the other of the source electrode and the drain electrode of the first transistor is electrically connected to the fourth wiring, wherein one of a source electrode and a drain electrode of the second transistor is electrically connected to the second wiring, wherein the other of the source electrode and the drain electrode of the second transistor is electrically connected to the first wiring, wherein one of a source electrode and a drain electrode of the third transistor is electrically connected to the first wiring, wherein the other of the source electrode and the drain electrode of the third transistor is electrically connected to the fourth wiring, wherein one of a source electrode and a drain electrode of the fourth transistor is electrically connected to the first wiring, wherein the other of the source electrode and the drain electrode of the fourth transistor is electrically connected to the first circuit, wherein the first to the fourth transistors each include an oxide semiconductor film, and wherein the fourth transistor has a lower off current than the first to the third transistors. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14, 15, 16)
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Specification