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Semiconductor device

  • US 9,865,746 B2
  • Filed: 03/16/2016
  • Issued: 01/09/2018
  • Est. Priority Date: 11/30/2012
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device comprising:

  • a first gate electrode;

    a first insulating film over the first gate electrode;

    an oxide semiconductor film comprising gallium over the first insulating film;

    a first oxide film over and in contact with the oxide semiconductor film;

    a source electrode and a drain electrode over the first oxide film;

    a second oxide film over and in contact with the first oxide film, the source electrode, and the drain electrode;

    a second insulating film over the second oxide film; and

    a second gate electrode over the second insulating film,wherein each of the first oxide film and the second oxide film comprises indium, gallium, and zinc,wherein in a channel length direction the oxide semiconductor film is smaller than the first gate electrode, andwherein in a channel width direction the oxide semiconductor film is smaller than the first gate electrode.

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