Hole collectors for silicon photovoltaic cells

• US 9,865,754 B2
• Filed: 10/10/2013
• Issued: 01/09/2018
• Est. Priority Date: 10/10/2012
• Status: Active Grant

• Current Assignee: Tesla Inc.
• Original Assignee: Tesla Inc.
• Inventors: Xie, Zhigang, Heng, Jiunn Benjamin, Wang, Wei, Fu, Jianming, Xu, Zheng
• Primary Examiner(s): Gardner, Shannon
• Application Number:
  US14/051,336
• Publication Number:
  US 20140096817A1
• Time in Patent Office: 1,552 Days
• CPC Class Codes: H01L 31/035209 comprising a quantum structures
• CPC Class Codes: H01L 31/062 the potential barriers being only of the metal-insulator-semiconductor type
• CPC Class Codes: H01L 31/18 Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
• CPC Class Codes: H01L 31/1804 comprising only elements of Group IV of the Periodic Table
• CPC Class Codes: Y02E 10/547 Monocrystalline silicon PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

One embodiment of the present invention provides a solar cell. The solar cell includes a base layer comprising crystalline Si (c-Si), a hole collector situated on a first side of the base layer, and an electron collector situated on a second side of the base layer, which is opposite the first side. The hole collector includes a quantum-tunneling-barrier (QTB) layer situated adjacent to the base layer and a transparent conducting oxide (TCO) layer situated adjacent to the QTB layer. The TCO layer has a work function of at least 5.0 eV.

Claims

1. A solar cell, comprising:

a base layer comprising crystalline Si (c-Si), wherein the base layer is lightly doped in entirety with a doping concentration between 1×

10¹⁵/cm³ and 1×

10¹⁶/cm³;

a hole collector positioned on a first surface of the base layer, wherein the hole collector includes a quantum-tunneling-barrier (QTB) layer and a transparent conductive oxide (TCO) layer, wherein the QTB layer is in direct physical contact with and substantially covers in entirety the first surface of the base layer, wherein the TCO layer is in direct physical contact with and substantially covers in entirety a surface the QTB layer, wherein a doping concentration at an interface between the base layer and the QTB layer is less than 1×

10¹⁶/cm³, and wherein the TCO layer has a work function of at least 5.0 eV; and

an electron collector positioned on a second surface of the base layer, wherein the second surface is opposite to the first surface.

2. The solar cell of claim 1, wherein the base layer comprises at least one of:

a mono-crystalline silicon wafer; and

an epitaxially grown crystalline-Si (c-Si) thin film.

3. The solar cell of claim 1, wherein the QTB layer comprises at least one of:

silicon oxide (SiO_x);

hydrogenated SiO_x;

silicon nitride (SiN_x);

hydrogenated SiN_x;

aluminum oxide (AlO_x);

aluminum nitride (AlN_x);

silicon oxynitride (SiON);

hydrogenated SiON;

amorphous Si (a-Si);

hydrogenated a-Si;

carbon doped Si; and

SiC.

4. The solar cell of claim 1, wherein the QTB layer has a thickness between 1 and 50 angstroms.

5. The solar cell of claim 1, wherein the QTB layer comprises one of:

SiO_x and hydrogenated SiO_x, and wherein the QTB layer is formed using at least one of the following techniques;

running hot deionized water over the base layer;

ozone oxygen oxidation;

atomic oxygen oxidation;

thermal oxidation;

wet or steam oxidation;

atomic layer deposition;

low-pressure radical oxidation; and

plasma-enhanced chemical-vapor deposition (PECVD).

6. The solar cell of claim 1, wherein the TCO layer includes one or more of:

tungsten doped indium oxide (IWO), Sn doped indium oxide (ITO), GaInO (GIO), GaInSnO (GITO), ZnInO (ZIO), and ZnInSnO (ZITO).

7. The solar cell of claim 1, wherein the TCO layer is formed using a low damage deposition technique comprising one of:

radio frequency (RF) sputtering;

thermal evaporation;

molecular beam epitaxy (MBE);

metalorganic chemical vapor deposition (MOCVD);

atomic layer deposition (ALD); and

ion plating deposition (IPD).

8. The solar cell of claim 1, wherein the hole collector is positioned on a front side of the solar cell, facing incident light, and wherein:

if the base layer is lightly doped with n-type dopants, the hole collector acts as a front-side emitter; and

if the base layer is lightly doped with p-type dopants, the hole collector acts as a front surface field (FSF) layer.

9. The solar cell of claim 8, wherein the electron collector is positioned on a back side of the solar cell, facing away from the incident light, and wherein:

if the base layer is lightly doped with n-type dopants, the electron collector acts as a back surface field (BSF) layer; and

if the base layer is lightly doped with p-type dopants, the electron collector acts as a back-side emitter.

10. The solar cell of claim 8, wherein the electron collector comprises one or more of:

a QTB layer;

amorphous-Si (a-Si);

hydrogenated a-Si; and

micro-crystalline Si.

11. The solar cell of claim 8, wherein the electron collector is graded doped and has a doping concentration ranging between 1×

10¹²/cm³ and 5×

10²⁰/cm³.

12. The solar cell of claim 1, wherein the hole collector is positioned on a back side of the solar cell, facing way from incident light, and wherein:

if the base layer is lightly doped with n-type dopants, the hole collector acts as a back-side emitter; and

if the base layer is lightly doped with p-type dopants, the hole collector acts as a back surface field (BSF) layer.

13. The solar cell of claim 12, wherein the electron collector is positioned on a front side of the solar cell, facing the incident light, and wherein:

if the base layer is lightly doped with n-type dopants, the electron collector acts as a front surface field (FSF) layer; and

if the base layer is lightly doped with p-type dopants, the electron collector acts as a front-side emitter.