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Semiconductor light emitting device

DC
  • US 9,865,773 B2
  • Filed: 06/07/2016
  • Issued: 01/09/2018
  • Est. Priority Date: 07/24/2001
  • Status: Expired due to Term
First Claim
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1. A semiconductor light emitting diode comprising:

  • a sapphire substrate;

    a plurality of semiconductor layers formed on said sapphire substrate and made of different materials from that of said sapphire substrate; and

    an ohmic electrode formed on the surface of the top layer of said semiconductor layers so that light generated in said semiconductor layers is emitted from said ohmic electrode or from said sapphire substrate;

    wherein protruding portions for scattering or diffracting light generated in said semiconductor layers are created in a repeated pattern in the surface of said sapphire substrate, and said protruding portions have a side face that is inclined to a laminating direction of said semiconductor layers with a taper angle of more than 105 degrees and not more than 160 degrees.

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