Semiconductor light emitting device

• US 9,865,773 B2
• Filed: 06/07/2016
• Issued: 01/09/2018
• Est. Priority Date: 07/24/2001
• Status: Expired due to Term

• Current Assignee: Nichia Corporation
• Original Assignee: Nichia Corporation
• Inventors: Niki, Isamu, Yamada, Motokazu, Sano, Masahiko, Shioji, Shuji
• Primary Examiner(s): SEFER, AHMED N
• Application Number:
  US15/175,281
• Publication Number:
  US 20160343905A1
• Time in Patent Office: 581 Days
• CPC Class Codes: H01L 21/02378 Silicon carbide
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/02647 Lateral overgrowth
• CPC Class Codes: H01L 2933/0083 Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/16 with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01L 33/26 Materials of the light emitting region
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: Y10T 428/24355 Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
• CPC Class Codes: Y10T 428/24479 including variation in thickness

Abstract

A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.

Claims

1. A semiconductor light emitting diode comprising:

a sapphire substrate;

a plurality of semiconductor layers formed on said sapphire substrate and made of different materials from that of said sapphire substrate; and

an ohmic electrode formed on the surface of the top layer of said semiconductor layers so that light generated in said semiconductor layers is emitted from said ohmic electrode or from said sapphire substrate;

wherein protruding portions for scattering or diffracting light generated in said semiconductor layers are created in a repeated pattern in the surface of said sapphire substrate, and said protruding portions have a side face that is inclined to a laminating direction of said semiconductor layers with a taper angle of more than 105 degrees and not more than 160 degrees.

2. The semiconductor light emitting diode of claim 1, wherein the taper angle of said side face of said protruding portions is more than 115 degrees.

3. The semiconductor light emitting diode of claim 1, wherein the taper angle of said side face of said protruding portions is more than 120 degrees.

4. The semiconductor light emitting diode of claim 1, wherein each of said protruding portions has sides that are not parallel to A-axis of the semiconductor layers in plan view of said sapphire substrate.

5. The semiconductor light emitting diode of claim 1, each of said protruding portions has a side that is perpendicular to an A axis said semiconductor layers in plan view of said sapphire substrate.

6. The semiconductor light emitting diode of claim 1, wherein said semiconductor layers are made of GaN-based semiconductors.

7. The semiconductor light emitting diode of claim 1, wherein said sapphire substrate is a C plane (0001) sapphire substrate.

8. The semiconductor light emitting diode of claim 1, wherein the repeated pattern of the protruding portions is such that six protruding portions forming a hexagon surround another protruding portion.

9. The semiconductor light emitting diode of claim 8, wherein the another protruding portion surrounded by the six protruding portions forming the hexagon and the six protruding portions forming the hexagon are oriented in the same way in plan view of the sapphire substrate.

10. The semiconductor light emitting diode of claim 8, wherein all protruding portions are arranged in the same direction.

11. The semiconductor light emitting diode according to claim 1, wherein the repeated pattern of the protruding portions is such that six protruding portions forming a hexagon surround another protruding portion, the hexagon having sides that are parallel to A-axis of the sapphire substrate in plan view of the sapphire substrate.

12. The semiconductor light emitting diode of claim 11, wherein the another protruding portion surrounded by the six protruding portions forming the hexagon and the six protruding portions of the hexagon are oriented in the same way in plan view of the sapphire substrate.

13. The semiconductor light emitting diode of claim 11, wherein all protruding portions are arranged in the same direction.

14. The semiconductor light emitting diode of claim 1, wherein, in plan view of the sapphire substrate, each of the protruding portions has a shape of a triangle.

15. The semiconductor light emitting diode of claim 14, wherein each of said protruding portions has sides that are not parallel to A-axis of the semiconductor layers in plan view of said sapphire substrate.

16. The semiconductor light emitting diode of claim 1, wherein a pitch of the repeated pattern is greater than or equal to λ

/4 and less than or equal to 10 μ

m, where λ

is a wavelength of light emitted from the semiconductor layers.

17. The semiconductor light emitting diode of claim 1, wherein an interval between the protruding portions is 20 μ

m or less.

18. The semiconductor light emitting diode of claim 1, wherein a step of the protruding portions is 50 angstroms or more.

19. The semiconductor light emitting diode of claim 1,

wherein, in plan view of the sapphire substrate, each of the protruding portions have a shape of a triangle, and wherein the repeated pattern of the protruding portions is such that six protruding portions forming a hexagon surround another protruding portion.

20. The semiconductor light emitting diode of claim 19, wherein each of said protruding portions has sides that are not parallel to A-axis of the semiconductor layers in plan view of said sapphire substrate.