Lighting systems having a truncated parabolic- or hyperbolic-conical light reflector, or a total internal reflection lens; and having another light reflector

• US 9,869,450 B2
• Filed: 02/09/2015
• Issued: 01/16/2018
• Est. Priority Date: 02/09/2015
• Status: Active Grant

• Current Assignee: Korrus Incorporated (MKD Electric, Inc.)
• Original Assignee: EcoSense Lighting Inc.
• Inventors: Pickard, Paul, Petluri, Raghuram L. V.
• Primary Examiner(s): MAY, ROBERT J
• Application Number:
  US14/617,849
• Publication Number:
  US 20160230958A1
• Time in Patent Office: 1,072 Days
• CPC Class Codes: F21V 13/14 the elements being filters or photoluminescent elements, reflectors and refractors
• CPC Class Codes: F21V 5/10 comprising photoluminescent material
• CPC Class Codes: F21V 7/0091 using total internal reflection
• CPC Class Codes: F21V 7/04 Optical design
• CPC Class Codes: F21V 9/08 for producing coloured light, e.g. monochromatic; for reducing intensity of light with provision for controlling the colour F21V9/40
• CPC Class Codes: F21V 9/38 Combination of two or more photoluminescent elements of different materials
• CPC Class Codes: F21Y 2115/10 Light-emitting diodes [LED]

Abstract

Lighting system including light source having semiconductor light-emitting device configured for emitting light having first spectral power distribution along central axis. System includes volumetric lumiphor located along central axis configured for converting some light emissions having first spectral power distribution into light emissions having second spectral power distribution. System may include visible light reflector having reflective surface and being spaced apart along central axis with volumetric lumiphor between semiconductor light-emitting device and visible light reflector. Reflective surface may be configured for causing portion of light emissions to be reflected by visible light reflector. Exterior surface of volumetric lumiphor may include concave exterior surface configured for receiving a mound-shaped reflective surface of visible light reflector. Volumetric lumiphor may have exterior surface that includes: concave exterior surface forming gap between semiconductor light-emitting device and volumetric lumiphor; or convex or concave exterior surface located away from and surrounding central axis. Related lighting processes.

Claims

1. A lighting system, comprising:

a truncated parabolic visible light reflector having an internal light reflective surface defining a cavity, and having an end and another end being mutually spaced apart along a central axis, the end permitting light emissions from the lighting system;

a light source being located at the another end of the truncated parabolic light reflector and including a semiconductor light-emitting device, the semiconductor light-emitting device being configured for emitting, along the central axis in the cavity, light emissions having a first spectral power distribution;

another visible light reflector, the another light reflector being located in the cavity and having another light reflective surface facing toward the another end of the truncated parabolic light reflector, the another light reflector being spaced apart along the central axis at a distance away from the semiconductor light-emitting device;

a volumetric lumiphor being located in the cavity along the central axis between the semiconductor light-emitting device and the another light reflector, and being configured for converting some of the light emissions into additional light emissions having a second spectral power distribution being different than the first spectral power distribution;

wherein the another light reflector is configured for causing portions of the light emissions and of the additional light emissions to be reflected by the another light reflective surface;

wherein the truncated parabolic light reflector is configured for causing some of the portions of the light emissions and additional light emissions, after being reflected by the another light reflective surface, to then be further reflected by the light-reflective surface and to bypass the another light reflector to be emitted from the end of the truncated parabolic light reflector; and

wherein the another light reflector is configured for permitting other portions of the light emissions and of the additional light emissions to pass through the another light reflector along the central axis and then be emitted from the end of the truncated parabolic light reflector.

2. The lighting system of claim 1, including a further visible light reflector being located at the another end of the truncated parabolic light reflector and having a further light-reflective surface facing toward the another light-reflective surface.

3. The lighting system of claim 2, wherein the further reflective surface of the further visible light reflector is configured for causing some of the light emissions and of the additional light emissions to be reflected by the further light reflector in a plurality of lateral directions away from the central axis.

4. The lighting system of claim 1, wherein the another light reflective surface is configured for causing the portions of the light emissions and of the additional light emissions that are reflected by the another light reflective surface to have reflectance values throughout the visible light spectrum being within a range of about 0.80 and about 0.95.

5. The lighting system of claim 1, wherein the another light reflector is configured for causing the other portions of the light emissions and of the additional light emissions that pass through the another light reflector to have transmittance values throughout the visible light spectrum being within a range of about 0.20 and about 0.05.

6. The lighting system of claim 1, wherein the another light reflective surface of the another light reflector is configured for causing some of the portions of the light emissions and of the additional light emissions that are reflected by the another light reflective surface to be redirected in a plurality of lateral directions away from the central axis.

7. The lighting system of claim 6, wherein the truncated parabolic light reflector is configured for causing some of the portions of the light emissions and of the additional light emissions to be redirected in a plurality of directions intersecting the central axis.

8. The lighting system of claim 7, wherein the semiconductor light-emitting device is configured for emitting the light emissions as having a luminous flux of a first magnitude, and wherein the lighting system is configured for causing the some of the portions of the light emissions and of the additional light emissions that are redirected in the plurality of directions intersecting the central axis to have a luminous flux of a second magnitude being at least about 50% as great as the first magnitude.

9. The lighting system of claim 7, wherein the semiconductor light-emitting device is configured for emitting the light emissions as having a luminous flux of a first magnitude, and wherein the lighting system is configured for causing the some of the portions of the light emissions and of the additional light emissions that are redirected in the plurality of directions intersecting the central axis to have a luminous flux of a second magnitude being at least about 80% as great as the first magnitude.

10. The lighting system of claim 1, wherein the lighting system is configured for forming combined light emissions by causing some of the light emissions to be combined together with some of the additional light emissions, and wherein the lighting system is configured for causing some of the combined light emissions to be emitted from the lighting system in a plurality of directions intersecting the central axis.

11. The lighting system of claim 10, wherein the lighting system is configured for causing some of the combined light emissions to be emitted from the lighting system in a plurality of directions diverging away from the central axis.

12. The lighting system of claim 10, wherein the lighting system is configured for causing some of the combined light emissions to be emitted from the lighting system in a plurality of directions along the central axis.

13. The lighting system of claim 1, wherein the another light reflector has a shape being centered on the central axis.

14. The lighting system of claim 1, wherein the another light reflector has a shape that extends away from the central axis in directions being transverse to the central axis.

15. The lighting system of claim 14, wherein the shape of the another light reflector has a maximum width in the directions transverse to the central axis, and wherein the volumetric lumiphor has a shape that extends away from the central axis in directions being transverse to the central axis, and wherein the shape of the volumetric lumiphor has a maximum width in the directions transverse to the central axis being smaller than the maximum width of the another light reflector.

16. The lighting system of claim 14, wherein the shape of the another light reflector has a maximum width in the directions transverse to the central axis, and wherein the volumetric lumiphor has a shape that extends away from the central axis in directions being transverse to the central axis, and wherein the shape of the volumetric lumiphor has a maximum width in the directions transverse to the central axis being equal to or larger than the maximum width of the another light reflector.

17. The lighting system of claim 14, wherein the another light reflective surface of the another light reflector has a distal portion being located at a greatest distance away from the central axis, and wherein the distal portion of the another light reflective surface has a beveled edge.

18. The lighting system of claim 14, wherein a portion of the another light reflective surface of the another light reflector is a planar light reflective surface.

19. The lighting system of claim 14, wherein a portion of the another light reflective surface of the another light reflector faces toward the semiconductor light-emitting device and extends away from the central axis in the directions transverse to the central axis.

20. The lighting system of claim 1, wherein a portion of the another light reflective surface of the another light reflector faces toward the semiconductor light-emitting device, and wherein the volumetric lumiphor has an exterior surface, and wherein a portion of the exterior surface of the volumetric lumiphor faces toward the portion of the another light reflective surface of the another light reflector.

21. The lighting system of claim 20, wherein the portion of the exterior surface of the volumetric lumiphor is configured for permitting entry into the volumetric lumiphor by the light emissions and the additional light emissions.

22. The lighting system of claim 1, wherein a portion of the another light reflective surface of the another light reflector is a convex light reflective surface facing toward the semiconductor light-emitting device.

23. The lighting system of claim 22, wherein a shortest distance between the semiconductor light-emitting device and the portion of the another light reflective surface of the another light reflector is located along the central axis.

24. The lighting system of claim 22, wherein the convex light reflective surface of the another light reflector is configured for causing some of the light emissions and of the additional light emissions that are reflected by the another light reflector to be redirected in a plurality of lateral directions away from the central axis.

25. The lighting system of claim 22, wherein a portion of the another light reflective surface of the another light reflector is a mound-shaped light reflective surface facing toward the semiconductor light-emitting device.

26. The lighting system of claim 25, wherein the volumetric lumiphor has an exterior surface, and wherein a portion of the exterior surface of the volumetric lumiphor is a concave exterior surface being configured for receiving the mound-shaped light reflective surface of the another light reflector.

27. The lighting system of claim 26, wherein the lighting system is configured for causing some of the light emissions and of the additional light emissions to be emitted from the volumetric lumiphor through the concave exterior surface, and wherein the another light reflector is configured for causing some of the light emissions and of the additional light emissions to be reflected by the another light reflective surface and to enter into the volumetric lumiphor through the concave exterior surface.

28. The lighting system of claim 1, wherein the volumetric lumiphor has an exterior surface, and wherein a portion of the exterior surface of the volumetric lumiphor is a concave exterior surface forming a gap between the semiconductor light-emitting device and the volumetric lumiphor.

29. The lighting system of claim 28, wherein the lighting system is configured for causing entry of some of the light emissions from the semiconductor light-emitting device into the volumetric lumiphor through the concave exterior surface, and wherein the volumetric lumiphor is configured for causing refraction of some of the light emissions.

30. The lighting system of claim 1, wherein the volumetric lumiphor has an exterior surface, and wherein a portion of the exterior surface of the volumetric lumiphor is a convex exterior surface surrounded by a concave exterior surface, and wherein the concave exterior surface forms a gap between the semiconductor light-emitting device and the volumetric lumiphor.

31. The lighting system of claim 1, wherein the volumetric lumiphor has an exterior surface, and wherein a portion of the exterior surface of the volumetric lumiphor is a convex exterior surface being located at a distance away from and surrounding the central axis.

32. The lighting system of claim 31, wherein the lighting system is configured for causing some of the light emissions and of the additional light emissions to be emitted from the volumetric lumiphor through the convex exterior surface, and wherein the convex exterior surface is configured for causing refraction of some of the light emissions and of the additional light emissions.

33. The lighting system of claim 1, wherein the volumetric lumiphor has an exterior surface, and wherein a portion of the exterior surface of the volumetric lumiphor is a concave exterior surface being located at a distance away from and surrounding the central axis.

34. The lighting system of claim 33, wherein the lighting system is configured for causing some of the light emissions and of the additional light emissions to be emitted from the volumetric lumiphor through the concave exterior surface, and wherein the concave exterior surface is configured for causing refraction of some of the light emissions and of the additional light emissions.

35. The lighting system of claim 1, wherein the volumetric lumiphor includes:

a phosphor;

a quantum dot;

a quantum wire;

a quantum well;

a photonic nanocrystal;

a semiconducting nanoparticle;

a scintillator;

a lumiphoric ink;

a lumiphoric organic dye;

or a day glow tape.

36. The lighting system of claim 1, wherein the volumetric lumiphor is configured for down-converting some of the light emissions of the semiconductor light-emitting device having wavelengths of the first spectral power distribution into the additional light emissions having wavelengths of the second spectral power distribution as being longer than wavelengths of the first spectral power distribution.

37. The lighting system of claim 1, wherein the semiconductor light-emitting device is configured for emitting light having a dominant- or peak-wavelength being within a range of between about 380 nanometers and about 530 nanometers.

38. The lighting system of claim 37, further including another semiconductor light-emitting device, wherein the another semiconductor light-emitting device is configured for emitting light having a dominant- or peak-wavelength being within a range of between about 380 nanometers and about 530 nanometers.

39. The lighting system of claim 37, wherein the volumetric lumiphor is configured for down-converting some of the light emissions of the semiconductor light-emitting device having wavelengths of the first spectral power distribution into the additional light emissions having wavelengths of the second spectral power distribution as being longer than wavelengths of the first spectral power distribution.

40. The lighting system of claim 37, wherein the lighting system is configured for causing the light emissions and the additional light emissions having the first and second spectral power distributions to be combined together forming combined light emissions having a color point with a color rendition index (CRI-Ra including R_1-8) being about equal to or greater than 50.

41. The lighting system of claim 37, wherein the lighting system is configured for causing the light emissions and the additional light emissions having the first and second spectral power distributions to be combined together forming combined light emissions having a color point with a color rendition index (CRI-Ra including R_1-8) being about equal to or greater than 75.

42. The lighting system of claim 37, wherein the lighting system is configured for causing the light emissions and the additional light emissions having the first and second spectral power distributions to be combined together forming combined light emissions having a color point with a color rendition index (CRI-Ra including R_1-8) being about equal to or greater than 95.

43. The lighting system of claim 37, wherein the lighting system is configured for causing the light emissions and the additional light emissions having the first and second spectral power distributions to be combined together forming combined light emissions having a color point with a color rendition index (CRI-R₉) being about equal to or greater than 50.

44. The lighting system of claim 37, wherein the lighting system is configured for causing the light emissions and the additional light emissions having the first and second spectral power distributions to be combined together forming combined light emissions having a color point with a color rendition index (CRI-R₉) being about equal to or greater than 75.

45. The lighting system of claim 37, wherein the lighting system is configured for causing the light emissions and the additional light emissions having the first and second spectral power distributions to be combined together forming combined light emissions having a color point with a color rendition index (CRI-R₉) being about equal to or greater than 90.

46. The lighting system of claim 37, wherein the lighting system is configured for forming combined light emissions by causing some of the light emissions having the first spectral power distribution to be combined together with some of the additional light emissions having the second spectral power distribution, and wherein the semiconductor light-emitting device and the volumetric lumiphor are configured for causing the combined light emissions to have a color point being within a distance of about equal to or less than +/−

0.009 delta(uv) away from a Planckian—

black-body locus throughout a spectrum of correlated color temperatures (CCTs) within a range of between about 1800K and about 6500K.

47. The lighting system of claim 37, wherein the lighting system is configured for forming combined light emissions by causing some of the light emissions having the first spectral power distribution to be combined together with some of the additional light emissions having the second spectral power distribution, and wherein the semiconductor light-emitting device and the volumetric lumiphor are configured for causing the combined light emissions to have a color point being below a Planckian—

black-body locus by a distance of about equal to or less than 0.009 delta(uv) throughout a spectrum of correlated color temperatures (CCTs) within a range of between about 1800K and about 6500K.

48. The lighting system of claim 1, wherein the semiconductor light-emitting device is configured for emitting light having a color point being greenish-blue, blue, or purplish-blue.

49. The lighting system of claim 1, wherein the semiconductor light-emitting device is configured for emitting light having a dominant- or peak-wavelength being within a range of between about 420 nanometers and about 510 nanometers.

50. The lighting system of claim 1, wherein the semiconductor light-emitting device is configured for emitting light having a dominant- or peak-wavelength being within a range of between about 445 nanometers and about 490 nanometers.

51. The lighting system of claim 50, wherein the volumetric lumiphor is configured for down-converting some of the light emissions of the semiconductor light-emitting device having wavelengths of the first spectral power distribution into the additional light emissions having wavelengths of the second spectral power distribution, and wherein the second spectral power distribution has a perceived color point being within a range of between about 491 nanometers and about 575 nanometers.

52. The lighting system of claim 51, wherein the volumetric lumiphor includes a first lumiphor that generates the additional light emissions having a perceived color point being within a range of between about 491 nanometers and about 575 nanometers, wherein the first lumiphor includes:

a phosphor;

a quantum dot;

a quantum wire;

a quantum well;

a photonic nanocrystal;

a semiconducting nanoparticle;

a scintillator;

a lumiphoric ink;

a lumiphoric organic dye;

or a day glow tape.

53. The lighting system of claim 51, wherein the volumetric lumiphor is configured for down-converting some of the light emissions of the semiconductor light-emitting device having the first spectral power distribution into the additional light emissions having wavelengths of a third spectral power distribution being different than the first and second spectral power distributions;

wherein the third spectral power distribution has a perceived color point being within a range of between about 610 nanometers and about 670 nanometers.

54. The lighting system of claim 53, wherein the volumetric lumiphor includes a second lumiphor that generates further light emissions having a perceived color point being within a range of between about 610 nanometers and about 670 nanometers, wherein the second lumiphor includes:

a phosphor;

a quantum dot;

a quantum wire;

a quantum well;

a photonic nanocrystal;

a semiconducting nanoparticle;

a scintillator;

a lumiphoric ink;

a lumiphoric organic dye;

or a day glow tape.

55. The lighting system of claim 53, wherein the lighting system is configured for causing the light emissions and the additional light emissions and the further light emissions having the first, second and third spectral power distributions to be combined together to form combined light emissions having a color point with a color rendition index (CRI-Ra including R_1-8) being about equal to or greater than 50.

56. The lighting system of claim 53, wherein the lighting system is configured for causing the light emissions and the additional light emissions and the further light emissions having the first, second and third spectral power distributions to be combined together to form combined light emissions having a color point with a color rendition index (CRI-Ra including R_1-8) being about equal to or greater than 75.

57. The lighting system of claim 53, wherein the lighting system is configured for causing the light emissions and the additional light emissions and the further light emissions having the first, second and third spectral power distributions to be combined together to form combined light emissions having a color point with a color rendition index (CRI-Ra including R_1-8) being about equal to or greater than 95.

58. The lighting system of claim 53, wherein the lighting system is configured for causing the light emissions and the additional light emissions and the further light emissions having the first, second and third spectral power distributions to be combined together to form combined light emissions having a color point with a color rendition index (CRI-R₉) being about equal to or greater than 50.

59. The lighting system of claim 53, wherein the lighting system is configured for causing the light emissions and the additional light emissions and the further light emissions having the first, second and third spectral power distributions to be combined together to form combined light emissions having a color point with a color rendition index (CRI-R₉) being about equal to or greater than 75.

60. The lighting system of claim 53, wherein the lighting system is configured for causing the light emissions and the additional light emissions and the further light emissions having the first, second and third spectral power distributions to be combined together to form combined light emissions having a color point with a color rendition index (CRI-R₉) being about equal to or greater than 90.

61. The lighting system of claim 53, wherein the volumetric lumiphor is configured for causing the light emissions and the additional light emissions and the further light emissions having the first, second and third spectral power distributions to be combined together to form combined light emissions having a color point being within a distance of about equal to or less than +/−

0.009 delta(uv) away from a Planckian—

black-body locus throughout a spectrum of correlated color temperatures (CCTs) within a range of between about 1800K and about 6500K.

62. The lighting system of claim 53, wherein the volumetric lumiphor is configured for causing the light emissions and the additional light emissions and the further light emissions having the first, second and third spectral power distributions to be combined together to form combined light emissions having a color point being below a Planckian—

black-body locus by a distance of about equal to or less than 0.009 delta(uv) throughout a spectrum of correlated color temperatures (CCTs) within a range of between about 1800K and about 6500K.

63. The lighting system of claim 53, wherein the first lumiphor includes a first quantum material, and wherein the second lumiphor includes a different second quantum material, and wherein each one of the first and second quantum materials has a spectral power distribution for light absorption being separate from both of the second and third spectral power distributions.

64. A lighting system, comprising:

a truncated conical visible light reflector having an internal light reflective surface defining a cavity, and having an end and another end being mutually spaced apart along a central axis, the end permitting light emissions from the lighting system;

a light source being located at the another end of the truncated conical light reflector and including a semiconductor light-emitting device, the semiconductor light-emitting device being configured for emitting, along the central axis in the cavity, light emissions having a first spectral power distribution;

another visible light reflector, the another light reflector being located in the cavity and having another light reflective surface facing toward the another end of the truncated conical light reflector, the another light reflector being spaced apart along the central axis at a distance away from the semiconductor light-emitting device;

a volumetric lumiphor being located in the cavity along the central axis between the semiconductor light-emitting device and the another light reflector, and being configured for converting some of the light emissions into additional light emissions having a second spectral power distribution being different than the first spectral power distribution;

wherein the another light reflector is configured for causing portions of the light emissions and of the additional light emissions to be reflected by the another light reflective surface;

wherein the truncated conical light reflector is configured for causing some of the portions of the light emissions and additional light emissions, after being reflected by the another light reflective surface, to then be further reflected by the light-reflective surface and to bypass the another light reflector to be emitted from the end of the truncated conical light reflector; and

wherein the another light reflector is configured for permitting other portions of the light emissions and of the additional light emissions to pass through the another light reflector along the central axis and then be emitted from the end of the truncated conical light reflector.

65. The lighting system of claim 64, including a further visible light reflector being located at the another end of the truncated conical light reflector and having a further light-reflective surface facing toward the another light-reflective surface.

66. The lighting system of claim 65, wherein the further reflective surface of the further visible light reflector is configured for causing some of the light emissions and of the additional light emissions to be reflected by the further light reflector in a plurality of lateral directions away from the central axis.

67. The lighting system of claim 64, wherein the another light reflective surface is configured for causing the portions of the light emissions and of the additional light emissions that are reflected by the another light reflective surface to have reflectance values throughout the visible light spectrum being within a range of about 0.80 and about 0.95.

68. The lighting system of claim 64, wherein the another light reflector is configured for causing the other portions of the light emissions and of the additional light emissions that pass through the another light reflector to have transmittance values throughout the light spectrum being within a range of about 0.20 and about 0.05.

69. The lighting system of claim 64, wherein the another light reflective surface of the another light reflector is configured for causing some of the portions of the light emissions and of the additional light emissions that are reflected by the another light reflective surface to be redirected in a plurality of lateral directions away from the central axis.

70. The lighting system of claim 69, wherein the truncated conical light reflector is configured for causing some of the portions of the light emissions and of the additional light emissions to be redirected in a plurality of directions intersecting the central axis.

71. The lighting system of claim 70, wherein the semiconductor light-emitting device is configured for emitting the light emissions as having a luminous flux of a first magnitude, and wherein the lighting system is configured for causing the some of the portions of the light emissions and of the additional light emissions that are redirected in the plurality of directions intersecting the central axis to have a luminous flux of a second magnitude being at least about 50% as great as the first magnitude.

72. The lighting system of claim 70, wherein the semiconductor light-emitting device is configured for emitting the light emissions as having a luminous flux of a first magnitude, and wherein the lighting system is configured for causing the some of the portions of the light emissions and of the additional light emissions that are redirected in the plurality of directions intersecting the central axis to have a luminous flux of a second magnitude being at least about 80% as great as the first magnitude.

73. The lighting system of claim 64, wherein the lighting system is configured for forming combined light emissions by causing some of the light emissions to be combined together with some of the additional light emissions, and wherein the lighting system is configured for causing some of the combined light emissions to be emitted from the lighting system in a plurality of directions intersecting the central axis.

74. The lighting system of claim 64, wherein the another light reflector has a shape that extends away from the central axis in directions being transverse to the central axis wherein the another light reflective surface of the another light reflector has a distal portion being located at a greatest distance away from the central axis, and wherein the distal portion of the another light reflective surface has a beveled edge.

75. A lighting system, comprising:

total internal reflection lens having an end and another end being mutually spaced apart along a central axis, the end permitting light emissions from the lighting system;

a light source being located at the another end of the total internal reflection lens and including a semiconductor light-emitting device, the semiconductor light-emitting device being configured for emitting, along the central axis in the cavity, light emissions having a first spectral power distribution;

another visible light reflector, the another light reflector having another light reflective surface facing toward the another end of the total internal reflection lens, the another light reflector being spaced apart along the central axis at a distance away from the semiconductor light-emitting device;

a volumetric lumiphor being located along the central axis between the semiconductor light-emitting device and the another light reflector, and being configured for converting some of the light emissions into additional light emissions having a second spectral power distribution being different than the first spectral power distribution;

wherein the another light reflector is configured for causing portions of the light emissions and of the additional light emissions to be reflected by the another light reflective surface;

wherein the total internal reflection lens is configured for causing some of the light emissions and of the additional light emissions to be redirected in a plurality of directions intersecting the central axis, and for causing some of the portions of the light emissions and additional light emissions, after being reflected by the another light reflective surface, to then be further reflected by the light-reflective surface and to bypass the another light reflector to be emitted from the end of the total internal reflection lens; and

wherein the another light reflector is configured for permitting other portions of the light emissions and of the additional light emissions to pass through the another light reflector along the central axis and then be emitted from the end of the total internal reflection lens.

76. The lighting system of claim 75, wherein the semiconductor light-emitting device is configured for emitting the light emissions as having a luminous flux of a first magnitude, and wherein the lighting system is configured for causing the some of the portions of the light emissions and of the additional light emissions that are redirected in the plurality of directions intersecting the central axis to have a luminous flux of a second magnitude being at least about 50% as great as the first magnitude.

77. The lighting system of claim 75, wherein the semiconductor light-emitting device is configured for emitting the light emissions as having a luminous flux of a first magnitude, and wherein the lighting system is configured for causing the some of the portions of the light emissions and of the additional light emissions that are redirected in the plurality of directions intersecting the central axis to have a luminous flux of a second magnitude being at least about 80% as great as the first magnitude.

78. The lighting system of claim 75, including a further visible light reflector being located at the another end of the total internal reflection lens and having a further light-reflective surface facing toward the another light-reflective surface.

79. The lighting system of claim 78, wherein the further reflective surface of the further visible light reflector is configured for causing some of the light emissions and of the additional light emissions to be reflected by the further light reflector in a plurality of lateral directions away from the central axis.

80. The lighting system of claim 75, wherein the another light reflective surface is configured for causing the portions of the light emissions and of the additional light emissions that are reflected by the another light reflective surface to have reflectance values throughout the visible light spectrum being within a range of about 0.80 and about 0.95.

81. The lighting system of claim 75, wherein the another light reflector is configured for causing the other portions of the light emissions and of the additional light emissions that pass through the another light reflector to have transmittance values throughout the visible light spectrum being within a range of about 0.20 and about 0.05.

82. The lighting system of claim 75, wherein the another light reflective surface of the another light reflector is configured for causing some of the portions of the light emissions and of the additional light emissions that are reflected by the another light reflective surface to be redirected in a plurality of lateral directions away from the central axis.

83. The lighting system of claim 82, wherein the total internal reflection lens is configured for causing some of the portions of the light emissions and of the additional light emissions to be redirected in a plurality of directions intersecting the central axis.

84. The lighting system of claim 75, wherein the lighting system is configured for forming combined light emissions by causing some of the light emissions to be combined together with some of the additional light emissions, and wherein the lighting system is configured for causing some of the combined light emissions to be emitted from the lighting system in a plurality of directions intersecting the central axis.

85. The lighting system of claim 75, wherein the another light reflector has a shape that extends away from the central axis in directions being transverse to the central axis wherein the another light reflective surface of the another light reflector has a distal portion being located at a greatest distance away from the central axis, and wherein the distal portion of the another light reflective surface has a beveled edge.

86. A lighting process, comprising:

providing a lighting system including;

a truncated parabolic visible light reflector having an internal light reflective surface defining a cavity, and having an end and another end being mutually spaced apart along a central axis, the end permitting light emissions from the lighting system;

a light source being located at the another end of the truncated parabolic light reflector and including a semiconductor light-emitting device being configured for emitting, along the central axis, light emissions having a first spectral power distribution;

a volumetric lumiphor being configured for converting some of the light emissions into additional light emissions having a second spectral power distribution being different than the first spectral power distribution; and

another visible light reflector, being located in the cavity and having another light reflective surface facing toward the another end of the truncated parabolic light reflector, the another light reflector being spaced apart along the central axis at a distance away from the semiconductor light-emitting device, with the volumetric lumiphor being located in the cavity along the central axis between the semiconductor light-emitting device and the another light reflector;

causing the semiconductor light-emitting device to emit the light emissions having the first spectral power distribution;

causing conversions of some of the light emissions into the additional light emissions;

causing the another light reflective surface of the another light reflector to reflect portions of the light emissions and of the additional light emissions; and

causing some of the portions of the light emissions and additional light emissions to then be further reflected by the light-reflective surface and to bypass the another light reflector to be emitted from the end of the truncated parabolic light reflector.

87. The lighting process of claim 86, wherein the lighting process further includes permitting other portions of the light emissions and of the additional light emissions to pass through the another light reflector along the central axis and to then be emitted from the end of the truncated parabolic light reflector.

88. A lighting process, comprising:

providing a lighting system including;

a truncated conical visible light reflector having an internal light reflective surface defining a cavity, and having an end and another end being mutually spaced apart along a central axis, the end permitting light emissions from the lighting system;

a light source being located at the another end of the truncated conical light reflector and including a semiconductor light-emitting device being configured for emitting, along the central axis, light emissions having a first spectral power distribution;

a volumetric lumiphor being configured for converting some of the light emissions into additional light emissions having a second spectral power distribution being different than the first spectral power distribution; and

another visible light reflector, being located in the cavity and having another light reflective surface facing toward the another end of the truncated conical light reflector, the another light reflector being spaced apart along the central axis at a distance away from the semiconductor light-emitting device, with the volumetric lumiphor being located in the cavity along the central axis between the semiconductor light-emitting device and the another light reflector;

causing the semiconductor light-emitting device to emit the light emissions having the first spectral power distribution;

causing conversions of some of the light emissions into the additional light emissions;

causing the another light reflective surface of the another light reflector to reflect portions of the light emissions and of the additional light emissions; and

causing some of the portions of the light emissions and additional light emissions to then be further reflected by the light-reflective surface and to bypass the another light reflector to be emitted from the end of the truncated conical light reflector.

89. The lighting process of claim 88, wherein the lighting process further includes permitting other portions of the light emissions and of the additional light emissions to pass through the another light reflector along the central axis and to then be emitted from the end of the truncated conical light reflector.