Cobalt etch back

• US 9,870,899 B2
• Filed: 06/24/2015
• Issued: 01/16/2018
• Est. Priority Date: 04/24/2015
• Status: Active Grant

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Yang, Jialing, Zhou, Baosuo, Shen, Meihua, Lill, Thorsten, Hoang, John
• Primary Examiner(s): Deo, Duy Vu N
• Assistant Examiner(s): Dahimene, Mahmoud
• Application Number:
  US14/749,285
• Publication Number:
  US 20160314985A1
• Time in Patent Office: 937 Days
• CPC Class Codes: C23C 16/50 using electric discharges generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34
• CPC Class Codes: C23C 16/52 Controlling or regulating the coating process C23C16/45557, C23C16/279 take precedence
• CPC Class Codes: H01J 37/32449 Gas control, e.g. control of the gas flow
• CPC Class Codes: H01J 37/32899 Multiple chambers, e.g. cluster tools
• CPC Class Codes: H01J 37/32926 Software, data control or modelling
• CPC Class Codes: H01L 21/32136 using plasmas
• CPC Class Codes: H01L 24/27 Manufacturing methods

Abstract

Methods of etching cobalt on substrates are provided. Some methods involve exposing the substrate to a boron-containing halide gas and an additive, and exposing the substrate to an activation gas and a plasma. Additives improve selectively depositing a thicker layer of a boron-containing halide material on a surface of a mask than on a surface of a metal. Additives include H₂, CH₄, CF₄, NF₃, and Cl₂. Boron-containing halide gases include BCl₃, BBr₃, BF₃, and BI₃. Exposures may be performed in two or more cycles, with variations in durations and/or bias power for each exposure in the two or more cycles.

Claims

1. A method of processing a substrate in a chamber, the method comprising:

cyclically,

(a) conducting a deposition, comprising exposing a substrate to a boron-containing halide gas and an additive selected from the group consisting of hydrogen-containing and halogen-containing gases for a duration sufficient to selectively deposit a first layer of boron-containing halide material on a surface of a mask on the substrate, the mask comprising a material consisting of elements selected from the group consisting of nitrogen, oxygen, carbon, and titanium atoms, and the duration sufficient to selectively deposit a second layer of boron-containing halide material on a surface of a non-volatile metal of the substrate selected from the group consisting of cobalt, iron, manganese, nickel, platinum, palladium, and ruthenium on the substrate, wherein the first layer is thicker than the second layer due at least in part to chemical selectivity; and

(b) conducting an activation, comprising exposing the substrate to an activation gas and an activation source that ionizes the activation gas to form an activated activation gas to react with the first and second layers of boron-containing halide material on the mask and the non-volatile metal to form etch products in a self-limiting etch of the substrate;

wherein (a) and (b) are conducted for a first set of cycles, followed by (a) and (b) conducted for a second set of cycles, in which the duration of (a) is longer in the first set of cycles than the duration of (a) in the second set of cycles resulting in a net deposition process, and in which the duration of (b) in the second set of cycles is longer than the duration of (b) in the first set of cycles, resulting in a net etch process.

2. The method of claim 1, wherein the second set of cycles is greater in number than the first set of cycles.

3. The method of claim 2, wherein the first set of cycles numbers between 1 and 10, and the second set of cycles numbers between 20 and 30.

4. The method of claim 1, wherein a bias is applied during (b).

5. The method of claim 3, wherein a bias is applied during (b) at a first bias power during the first set of cycles and a second bias power during the second set of cycles.

6. The method of claim 5, wherein the second bias power is between about 30 V and about 150 V.

7. The method of claim 1, wherein the additive is selected from the group consisting of H₂, CH₄, CF₄, NF₃, Cl₂, and combinations thereof.

8. The method of claim 1, wherein the activation gas is selected from the group consisting of Ar, H₂, CH₄, CF₄, He, Ne, Xe, NF₃, and combinations thereof.

9. The method of claim 1, wherein the boron-containing halide gas is selected from the group consisting of BCl₃, BBr₃, BF₃, and BI₃.

10. The method of claim 1, wherein the non-volatile metal is cobalt.

11. The method of claim 1, wherein the activation source is a plasma.

12. The method of claim 11, wherein the plasma power is between about 100 W and about 1500 W.

13. The method of claim 1, wherein the substrate is patterned.

14. The method of claim 1, wherein the chamber pressure is between about 2 mT and about 90 mT.

15. The method of claim 1, wherein roughness of the surface of the metal is less than about 5 nm RMS.

16. The method of claim 1, wherein (a) and (b) are performed without breaking vacuum.

17. The method of claim 1, wherein (a) comprises a self-limiting reaction.

18. The method of claim 1, wherein the metal is cobalt and the mask is TiN.

19. The method of claim 1, wherein the metal is cobalt and the mask is an ashable hard mask made primarily of carbon material.