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Monolithic microwave integrated circuits

  • US 9,871,008 B2
  • Filed: 11/04/2016
  • Issued: 01/16/2018
  • Est. Priority Date: 08/12/2010
  • Status: Active Grant
First Claim
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1. A monolithic microwave integrated circuit, comprising:

  • a semiconductor substrate having a front surface, a rear surface, and a bulk resistivity equal to or greater than 100 Ohm-cm;

    a transistor proximate to the front surface of the semiconductor substrate, wherein the transistor has a doped common region in the semiconductor substrate;

    multiple conductive through-substrate vias (TSVs) extending from the front surface to the rear surface of the semiconductor substrate;

    electrical interconnections overlying the front surface of the semiconductor substrate to electrically couple the transistor with at least some of the multiple conductive TSVs; and

    a reference node supported by a rear surface of the semiconductor substrate and electrically coupled with at least some of the multiple conductive TSVs.

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