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Metal oxide film and method for forming metal oxide film

  • US 9,871,058 B2
  • Filed: 04/16/2015
  • Issued: 01/16/2018
  • Est. Priority Date: 11/08/2012
  • Status: Active Grant
First Claim
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1. An active matrix display device comprising a pixel, the pixel comprising a pixel electrode and a first transistor electrically connected to the pixel electrode, the first transistor comprising:

  • an oxide semiconductor film comprising a crystalline part, the oxide semiconductor film including a channel formation region; and

    a gate electrode adjacent to the channel formation region with a gate insulating layer therebetween,wherein the oxide semiconductor film includes a first metal, a second metal, and a third metal,wherein the first metal is indium, the second metal is zinc, and the third metal is any one of Al, Ti, Ga, Y, Zr, La, Ce, Nd and Hf,wherein a size of the crystalline part is less than or equal to 10 nm,wherein a plurality of circumferentially distributed spots are observable in a measurement area greater than or equal to an area with a diameter of 5 nmφ and

    less than or equal to an area with a diameter of 10 nmφ

    in a nanobeam electron diffraction pattern of a cross-section of the oxide semiconductor film, andwherein a halo pattern is observable in a selected-area electron diffraction pattern of a plane of the oxide semiconductor film,wherein a crystalline peak is not observable in an XRD spectrum with respect to the oxide semiconductor film.

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