Metal oxide film and method for forming metal oxide film
First Claim
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1. An active matrix display device comprising a pixel, the pixel comprising a pixel electrode and a first transistor electrically connected to the pixel electrode, the first transistor comprising:
- an oxide semiconductor film comprising a crystalline part, the oxide semiconductor film including a channel formation region; and
a gate electrode adjacent to the channel formation region with a gate insulating layer therebetween,wherein the oxide semiconductor film includes a first metal, a second metal, and a third metal,wherein the first metal is indium, the second metal is zinc, and the third metal is any one of Al, Ti, Ga, Y, Zr, La, Ce, Nd and Hf,wherein a size of the crystalline part is less than or equal to 10 nm,wherein a plurality of circumferentially distributed spots are observable in a measurement area greater than or equal to an area with a diameter of 5 nmφ and
less than or equal to an area with a diameter of 10 nmφ
in a nanobeam electron diffraction pattern of a cross-section of the oxide semiconductor film, andwherein a halo pattern is observable in a selected-area electron diffraction pattern of a plane of the oxide semiconductor film,wherein a crystalline peak is not observable in an XRD spectrum with respect to the oxide semiconductor film.
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Abstract
A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nmφ and less than or equal to 10 nmφ.
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Citations
29 Claims
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1. An active matrix display device comprising a pixel, the pixel comprising a pixel electrode and a first transistor electrically connected to the pixel electrode, the first transistor comprising:
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an oxide semiconductor film comprising a crystalline part, the oxide semiconductor film including a channel formation region; and a gate electrode adjacent to the channel formation region with a gate insulating layer therebetween, wherein the oxide semiconductor film includes a first metal, a second metal, and a third metal, wherein the first metal is indium, the second metal is zinc, and the third metal is any one of Al, Ti, Ga, Y, Zr, La, Ce, Nd and Hf, wherein a size of the crystalline part is less than or equal to 10 nm, wherein a plurality of circumferentially distributed spots are observable in a measurement area greater than or equal to an area with a diameter of 5 nmφ and
less than or equal to an area with a diameter of 10 nmφ
in a nanobeam electron diffraction pattern of a cross-section of the oxide semiconductor film, andwherein a halo pattern is observable in a selected-area electron diffraction pattern of a plane of the oxide semiconductor film, wherein a crystalline peak is not observable in an XRD spectrum with respect to the oxide semiconductor film. - View Dependent Claims (2, 3, 4, 5, 6)
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7. An active matrix display device comprising a pixel, the pixel comprising a pixel electrode and a first transistor electrically connected to the pixel electrode, the first transistor comprising:
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an oxide semiconductor film comprising a crystalline part, the oxide semiconductor film including a channel formation region; and a gate electrode adjacent to the channel formation region with a gate insulating layer therebetween, wherein the oxide semiconductor film includes a first metal, a second metal, and a third metal, wherein the first metal is indium, the second metal is zinc, and the third metal is any one of Al, Ti, Ga, Y, Zr, La, Ce, Nd and Hf, wherein a size of the crystalline part is less than or equal to 10 nm, wherein a plurality of circumferentially distributed spots are observable in a measurement area greater than or equal to an area with a diameter of 5 nmφ and
less than or equal to an area with a diameter of 10 nmφ
in a nanobeam electron diffraction pattern of a cross-section of the oxide semiconductor film, andwherein a crystalline peak is not observable in an XRD spectrum with respect to the oxide semiconductor film. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14)
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15. An active matrix display device comprising a pixel, the pixel comprising a pixel electrode and a first transistor electrically connected to the pixel electrode, the first transistor comprising:
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an oxide semiconductor film comprising a crystalline part, the oxide semiconductor film including a channel formation region; and a gate electrode adjacent to the channel formation region with a gate insulating layer therebetween, wherein the oxide semiconductor film includes a first metal, a second metal, and a third metal, wherein the first metal is indium, the second metal is zinc, and the third metal is any one of Al, Ti, Ga, Y, Zr, La, Ce, Nd and Hf, wherein a size of the crystalline part is less than or equal to 10 nm, wherein a plurality of circumferentially distributed spots are observable in a measurement area greater than or equal to an area with a diameter of 5 nmφ and
less than or equal to an area with a diameter of 10 nmφ
in a nanobeam electron diffraction pattern of a cross-section of the oxide semiconductor film, andwherein spots having order of regularity that represents a crystal state in which crystal parts are aligned with a specific plane are observable in the measurement area greater than or equal to an area with a diameter of 5 nmφ and
less than or equal to an area with a diameter of 10 nmφ
in the cross-sectional direction of the measurement area of a film thinned from the oxide semiconductor film to be less than or equal to 10 nm,wherein a crystalline peak is not observable in an XRD spectrum with respect to the oxide semiconductor film. - View Dependent Claims (16, 17, 18, 19, 20, 21)
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22. An active matrix display device comprising a pixel, the pixel comprising a pixel electrode and a first transistor electrically connected to the pixel electrode, the first transistor comprising:
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a first oxide semiconductor film; a second oxide semiconductor film on the first oxide semiconductor film; a gate electrode adjacent to one of the first oxide semiconductor film and the second oxide semiconductor film with a gate insulating film interposed therebetween, wherein at least one of the first oxide semiconductor film and the second oxide semiconductor film includes a first metal, a second metal, and a third metal, wherein the at least one of the first oxide semiconductor film and the second oxide semiconductor film comprises a crystalline part, wherein the first metal is indium, the second metal is zinc, and the third metal is any one of Al, Ti, Ga, Y, Zr, La, Ce, Nd and Hf, wherein a size of the crystalline part is less than or equal to 10 nm, and wherein a plurality of circumferentially distributed spots are observable in a measurement area greater than or equal to an area with a diameter of 5 nmφ and
less than or equal to an area with a diameter of 10 nmφ
in a nanobeam electron diffraction pattern of a cross-section of the at least one of the first oxide semiconductor film and the second oxide semiconductor film,wherein a crystalline peak is not observable in an XRD spectrum with respect to the at least one of the oxide semiconductor film. - View Dependent Claims (23, 24, 25, 26, 27, 28, 29)
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Specification