Semiconductor device and method for manufacturing the same
First Claim
1. A semiconductor device comprising:
- a first insulating layer including aluminum and oxygen;
an oxide semiconductor layer over the first insulating layer;
a gate insulating layer over the oxide semiconductor layer;
a gate electrode over the gate insulating layer;
a second insulating layer in direct contact with a top surface of the gate electrode, a first side surface of the gate electrode and a second side surface of the gate electrode, the second insulating layer containing aluminum and oxygen;
a third insulating layer over the gate electrode, the third insulating layer containing silicon, oxygen and nitrogen;
a fourth insulating layer over the second insulating layer and the third insulating layer, the fourth insulating layer containing aluminum and oxygen;
a source electrode electrically connected to the oxide semiconductor layer; and
a drain electrode electrically connected to the oxide semiconductor layer,wherein a distance between the gate electrode and a contact region in which the oxide semiconductor layer is in direct contact with the source electrode is greater than or equal to 1 nm and less than or equal to 30 nm.
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Accused Products
Abstract
A first conductive film overlapping with an oxide semiconductor film is formed over a gate insulating film, a gate electrode is formed by selectively etching the first conductive film using a resist subjected to electron beam exposure, a first insulating film is formed over the gate insulating film and the gate electrode, removing a part of the first insulating film while the gate electrode is not exposed, an anti-reflective film is formed over the first insulating film, the anti-reflective film, the first insulating film and the gate insulating film are selectively etched using a resist subjected to electron beam exposure, and a source electrode in contact with one end of the oxide semiconductor film and one end of the first insulating film and a drain electrode in contact with the other end of the oxide semiconductor film and the other end of the first insulating film are formed.
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Citations
16 Claims
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1. A semiconductor device comprising:
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a first insulating layer including aluminum and oxygen; an oxide semiconductor layer over the first insulating layer; a gate insulating layer over the oxide semiconductor layer; a gate electrode over the gate insulating layer; a second insulating layer in direct contact with a top surface of the gate electrode, a first side surface of the gate electrode and a second side surface of the gate electrode, the second insulating layer containing aluminum and oxygen; a third insulating layer over the gate electrode, the third insulating layer containing silicon, oxygen and nitrogen; a fourth insulating layer over the second insulating layer and the third insulating layer, the fourth insulating layer containing aluminum and oxygen; a source electrode electrically connected to the oxide semiconductor layer; and a drain electrode electrically connected to the oxide semiconductor layer, wherein a distance between the gate electrode and a contact region in which the oxide semiconductor layer is in direct contact with the source electrode is greater than or equal to 1 nm and less than or equal to 30 nm. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor device comprising:
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a first insulating layer including aluminum and oxygen; an oxide semiconductor layer over the first insulating layer; a gate insulating layer over the oxide semiconductor layer; a gate electrode over the gate insulating layer; a second insulating layer in direct contact with a top surface of the gate electrode, a first side surface of the gate electrode and a second side surface of the gate electrode, the second insulating layer containing aluminum and oxygen; a third insulating layer over the gate electrode, the third insulating layer containing silicon, oxygen and nitrogen; a fourth insulating layer over the second insulating layer and the third insulating layer, the fourth insulating layer containing aluminum and oxygen; a source electrode electrically connected to the oxide semiconductor layer; and a drain electrode electrically connected to the oxide semiconductor layer, wherein a distance between the gate electrode and a contact region in which the oxide semiconductor layer is in direct contact with the source electrode is greater than or equal to 1 nm and less than or equal to 30 nm, wherein the third insulating layer is in direct contact with a side surface of the second insulating layer. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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Specification