×

Semiconductor device and method for manufacturing the same

  • US 9,871,059 B2
  • Filed: 12/07/2015
  • Issued: 01/16/2018
  • Est. Priority Date: 12/23/2011
  • Status: Expired due to Fees
First Claim
Patent Images

1. A semiconductor device comprising:

  • a first insulating layer including aluminum and oxygen;

    an oxide semiconductor layer over the first insulating layer;

    a gate insulating layer over the oxide semiconductor layer;

    a gate electrode over the gate insulating layer;

    a second insulating layer in direct contact with a top surface of the gate electrode, a first side surface of the gate electrode and a second side surface of the gate electrode, the second insulating layer containing aluminum and oxygen;

    a third insulating layer over the gate electrode, the third insulating layer containing silicon, oxygen and nitrogen;

    a fourth insulating layer over the second insulating layer and the third insulating layer, the fourth insulating layer containing aluminum and oxygen;

    a source electrode electrically connected to the oxide semiconductor layer; and

    a drain electrode electrically connected to the oxide semiconductor layer,wherein a distance between the gate electrode and a contact region in which the oxide semiconductor layer is in direct contact with the source electrode is greater than or equal to 1 nm and less than or equal to 30 nm.

View all claims
  • 0 Assignments
Timeline View
Assignment View
    ×
    ×