Method of manufacturing a termination arrangement for a vertical MOSFET
First Claim
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1. A method comprising:
- arranging a semiconductor layer of a transistor structure, the semiconductor layer having an active region and an adjacent termination region, the termination region including a recessed area;
forming a field insulator layer at a first portion of the recessed area of the termination region to form an insulator step structure at the bottom of the recessed area; and
forming a gate insulator layer at a second adjacent portion of the recessed area of the termination region, the gate insulator layer adjoining the insulating step structure at the bottom of the recessed area.
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Abstract
Representative implementations of devices and techniques provide a termination arrangement for a transistor structure. The periphery of a transistor structure may include a recessed area having features arranged to improve performance of the transistor at or near breakdown.
9 Citations
21 Claims
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1. A method comprising:
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arranging a semiconductor layer of a transistor structure, the semiconductor layer having an active region and an adjacent termination region, the termination region including a recessed area; forming a field insulator layer at a first portion of the recessed area of the termination region to form an insulator step structure at the bottom of the recessed area; and forming a gate insulator layer at a second adjacent portion of the recessed area of the termination region, the gate insulator layer adjoining the insulating step structure at the bottom of the recessed area. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method comprising:
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arranging a semiconductor layer of a transistor structure, the semiconductor layer having an active region and an adjacent termination region, the termination region including a recessed area; forming a field insulator layer at a first portion of the recessed area of the termination region to form an insulator step structure at the bottom of the recessed area, the step insulator structure being formed as a thickening of the field insulator layer from a first thickness to a second thickness; and forming a gate insulator layer at a second adjacent portion of the recessed area of the termination region, the gate insulator layer adjoining the insulating step structure at the bottom of the recessed area. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21)
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Specification