×

Bipolar semiconductor device with sub-cathode enhancement regions

  • US 9,871,128 B2
  • Filed: 03/18/2016
  • Issued: 01/16/2018
  • Est. Priority Date: 03/18/2016
  • Status: Active Grant
First Claim
Patent Images

1. A bipolar semiconductor device comprising a plurality of unit cells, each of said plurality of unit cells comprising:

  • a drift region having a first conductivity type situated over an anode layer having a second conductivity type opposite said first conductivity type;

    first and second depletion trenches, each having a depletion electrode;

    a first control trench situated between said first and second depletion trenches, said first control trench extending into said drift region and being adjacent to cathode diffusions;

    an enhancement region having said first conductivity type localized in said drift region between said first control trench and at least one of said first and second depletion trenches,a third depletion trench adjacent to one of said first and second depletion trenches, wherein said enhancement region does not extend between said third depletion trench and either of said first and second depletion trenches,wherein said first control trench extends deeper into said drift region than said enhancement region.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×