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Semiconductor device with insulating section of varying thickness

  • US 9,871,131 B2
  • Filed: 08/30/2016
  • Issued: 01/16/2018
  • Est. Priority Date: 03/09/2016
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first semiconductor region of a first conductivity type;

    a second semiconductor region of a second conductivity type provided on the first semiconductor region;

    a third semiconductor region of the first conductivity type selectively provided on the second semiconductor region;

    a first electrode surrounded by the first semiconductor region, the first electrode includinga first electrode portion including a first end of the first electrode in a first direction from the first semiconductor region to the second semiconductor region, anda second electrode portion provided on the first electrode portion;

    a first insulating section provided between the first electrode and the first semiconductor region, the first insulating section includinga second insulating portion arranged side by side with the second electrode portion in a second direction perpendicular to the first direction, anda first insulating portion arranged side by side with the first electrode portion in the second direction, a length of the first insulating portion in the first direction being greater than a length of the second insulating portion in the first direction, and a thickness of the first insulating portion in the second direction being greater than a thickness of the second insulating portion in the second direction;

    a gate electrode provided on a second end of the first electrode opposite the first end in the first direction such that a width of the gate electrode in the second direction is approximately equal to a width of the first electrode portion in the second direction; and

    a gate insulating section provided between the gate electrode and the second semiconductor region.

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