Semiconductor integrated circuit, latch circuit, and flip-flop circuit
First Claim
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1. A semiconductor integrated circuit connected between a first node and a second node, the semiconductor integrated circuit comprising:
- a first transistor of a first conductivity type located between a first potential node to which a first potential is applied and the first node, and having a gate connected to the second node;
a second transistor of a second conductivity type having a drain connected to the first node;
a third transistor of the second conductivity type located between a third node connected to a source of the second transistor and a second potential node to which a second potential is applied, and having a gate connected to the second node;
a fourth transistor of the first conductivity type having a source and a drain either one of which is connected to a gate of the second transistor, and a gate and the drain to both of which the second potential is applied;
a fifth transistor of the first conductivity type located between a drain of the first transistor and the first node; and
a sixth transistor of the second conductivity type having a gate and a drain to both of which the first potential is applied, and a source connected to a gate of the fifth transistor,wherein when a signal at the second node changes, a third potential for turning on the fourth transistor is applied to the gate of the fourth transistor, and a potential obtained by shifting the third potential by a threshold of the fourth transistor is applied to the gate of the second transistor.
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Abstract
A semiconductor integrated circuit connected between a first node and a second node includes first to fourth transistors. When a signal at the second node changes, the fourth transistor is turned on, and a potential obtained by shifting a third potential by the threshold of the fourth transistor is applied to the gate of the second transistor.
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Citations
5 Claims
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1. A semiconductor integrated circuit connected between a first node and a second node, the semiconductor integrated circuit comprising:
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a first transistor of a first conductivity type located between a first potential node to which a first potential is applied and the first node, and having a gate connected to the second node; a second transistor of a second conductivity type having a drain connected to the first node; a third transistor of the second conductivity type located between a third node connected to a source of the second transistor and a second potential node to which a second potential is applied, and having a gate connected to the second node; a fourth transistor of the first conductivity type having a source and a drain either one of which is connected to a gate of the second transistor, and a gate and the drain to both of which the second potential is applied; a fifth transistor of the first conductivity type located between a drain of the first transistor and the first node; and a sixth transistor of the second conductivity type having a gate and a drain to both of which the first potential is applied, and a source connected to a gate of the fifth transistor, wherein when a signal at the second node changes, a third potential for turning on the fourth transistor is applied to the gate of the fourth transistor, and a potential obtained by shifting the third potential by a threshold of the fourth transistor is applied to the gate of the second transistor. - View Dependent Claims (2, 3, 4, 5)
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Specification