Multiple bonding in wafer level packaging
First Claim
Patent Images
1. A device, comprising:
- a micro-electro-mechanical systems (MEMS) substrate including a first bonding layer, wherein the first bonding layer includes a combination of amorphous silicon and polysilicon;
a semiconductor substrate including a second bonding layer, the semiconductor substrate electrically coupled to the MEMS substrate by bonding the first bonding layer to the second bonding layer, thereby forming a conductive path traversing at least the first bonding layer; and
a cap including a third bonding layer, the cap coupled to the semiconductor substrate by bonding the second bonding layer to the third bonding layer, wherein the third bonding layer includes germanium and the MEMS substrate is hermetically sealed between the cap and the semiconductor substrate, and wherein a bottom surface of the cap is coplanar with a bottom surface of the MEMS substrate.
1 Assignment
0 Petitions
Accused Products
Abstract
A MEMS device is described. The device includes a micro-electro-mechanical systems (MEMS) substrate including a first bonding layer, a semiconductor substrate including a second bonding layer, and a cap including a third bonding layer, the cap coupled to the semiconductor substrate by bonding the second bonding layer to the third bonding layer. The first bonding layer includes silicon, the semiconductor substrate is electrically coupled to the MEMS substrate by bonding the first bonding layer to the second bonding layer, and the MEMS substrate is hermetically sealed between the cap and the semiconductor substrate.
-
Citations
17 Claims
-
1. A device, comprising:
-
a micro-electro-mechanical systems (MEMS) substrate including a first bonding layer, wherein the first bonding layer includes a combination of amorphous silicon and polysilicon; a semiconductor substrate including a second bonding layer, the semiconductor substrate electrically coupled to the MEMS substrate by bonding the first bonding layer to the second bonding layer, thereby forming a conductive path traversing at least the first bonding layer; and a cap including a third bonding layer, the cap coupled to the semiconductor substrate by bonding the second bonding layer to the third bonding layer, wherein the third bonding layer includes germanium and the MEMS substrate is hermetically sealed between the cap and the semiconductor substrate, and wherein a bottom surface of the cap is coplanar with a bottom surface of the MEMS substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7)
-
-
8. A device, comprising:
-
a micro-electro-mechanical systems (MEMS) substrate including a first bonding layer, wherein the first bonding layer comprises amorphous silicon; a complementary metal-oxide semiconductor (CMOS) device including a second bonding layer, the CMOS device electrically coupled to the MEMS substrate by bonding the first bonding layer to the second bonding layer, thereby forming a conductive path traversing at least the first bonding layer; and a cap including a third bonding layer, the cap coupled to the CMOS device by bonding the second bonding layer to the third bonding layer, wherein the third bonding layer includes germanium and the MEMS substrate is hermetically sealed between the cap and the CMOS device, and wherein a bottom surface of the cap is coplanar with a bottom surface of the MEMS substrate. - View Dependent Claims (9, 10, 11, 12)
-
-
13. A device, comprising:
-
a micro-electro-mechanical systems (MEMS) structure including a MEMS substrate and a first bonding layer interfacing with a bottom surface of the MEMS substrate, wherein the first bonding layer comprises silicon; a semiconductor substrate including a second bonding layer, wherein the second bonding layer comprises aluminum and the semiconductor substrate is electrically coupled to the MEMS structure by bonding the first bonding layer to the second bonding layer; and a cap structure including a cap feature and a third bonding layer interfacing with a bottom surface of the cap feature, wherein the third bonding layer comprises germanium and the cap structure is coupled to the semiconductor substrate by bonding the second bonding layer to the third bonding layer, wherein the MEMS structure is hermetically sealed between the cap structure and the semiconductor substrate, and wherein the bottom surface of the cap feature is coplanar with the bottom surface of the MEMS structure. - View Dependent Claims (14, 15, 16, 17)
-
Specification