Semiconductor device and method of forming interposer with opening to contain semiconductor die
First Claim
1. A method of making a semiconductor device, comprising:
- providing a first interposer including an opening and a vertical conduction path through the first interposer;
disposing a first semiconductor die over a first surface of the first interposer, an active surface of the first semiconductor die oriented toward the first interposer;
disposing a second semiconductor die within the opening of the first interposer, a non-active surface of the second semiconductor die oriented toward the first semiconductor die;
depositing an encapsulant over the first semiconductor die and around the second semiconductor die within the opening of the first interposer; and
forming an interconnect structure over the first interposer, the encapsulant, and the second semiconductor die by,(a) forming an insulating layer on a surface of the encapsulant, on an active surface of the second semiconductor die opposite the non-active surface, and on a second surface of the first interposer opposite the first surface, and(b) forming a conductive layer on the active surface of the second semiconductor die and on the second surface of the first interposer.
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Accused Products
Abstract
A semiconductor device has an interposer mounted over a carrier. The interposer includes TSV formed either prior to or after mounting to the carrier. An opening is formed in the interposer. The interposer can have two-level stepped portions with a first vertical conduction path through a first stepped portion and second vertical conduction path through a second stepped portion. A first and second semiconductor die are mounted over the interposer. The second die is disposed within the opening of the interposer. A discrete semiconductor component can be mounted over the interposer. A conductive via can be formed through the second die or encapsulant. An encapsulant is deposited over the first and second die and interposer. A portion of the interposer can be removed to that the encapsulant forms around a side of the semiconductor device. An interconnect structure is formed over the interposer and second die.
51 Citations
11 Claims
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1. A method of making a semiconductor device, comprising:
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providing a first interposer including an opening and a vertical conduction path through the first interposer; disposing a first semiconductor die over a first surface of the first interposer, an active surface of the first semiconductor die oriented toward the first interposer; disposing a second semiconductor die within the opening of the first interposer, a non-active surface of the second semiconductor die oriented toward the first semiconductor die; depositing an encapsulant over the first semiconductor die and around the second semiconductor die within the opening of the first interposer; and forming an interconnect structure over the first interposer, the encapsulant, and the second semiconductor die by, (a) forming an insulating layer on a surface of the encapsulant, on an active surface of the second semiconductor die opposite the non-active surface, and on a second surface of the first interposer opposite the first surface, and (b) forming a conductive layer on the active surface of the second semiconductor die and on the second surface of the first interposer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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Specification