Display device, light-emitting device, and electronic appliance having organic resin film

• US 9,876,058 B2
• Filed: 05/06/2015
• Issued: 01/23/2018
• Est. Priority Date: 05/09/2014
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Eguchi, Shingo, Isa, Toshiyuki, Kaga, Sayaka
• Primary Examiner(s): Williams, Alexander Oscar
• Application Number:
  US14/705,774
• Publication Number:
  US 20150325631A1
• Time in Patent Office: 993 Days
• Field of Search: 257 40
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/24 including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 including organic materials H10K99/00
• CPC Class Codes: H01L 29/786 Thin film transistors, i.e. transistors with a channel being at least partly a thin film transistors having only the source or the drain region on an insulator layer H01L29/0653; thin film FinFETs H01L29/785
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H10K 50/84 Passivation; Containers; Encapsulations
• CPC Class Codes: H10K 50/8426 Peripheral sealing arrangements, e.g. adhesives, sealants
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/123 Connection of the pixel electrodes to the thin film transistors [TFT]
• CPC Class Codes: H10K 59/124 Insulating layers formed between TFT elements and OLED elements
• CPC Class Codes: H10K 59/40 OLEDs integrated with touch screens

Abstract

A highly reliable display device or electronic appliance is provided. The display device or a light-emitting device includes a substrate; a light-emitting element including a first electrode, an EL layer, and a second electrode; an organic resin film in contact with the light-emitting element; and an oxide semiconductor film in contact with the light-emitting element and the organic resin film. The oxide semiconductor film is in contact with the first electrode or the second electrode included in the light-emitting element. The oxide semiconductor film is in contact with an exposed portion of the organic resin film, typically, a side surface of the organic resin film. The light-emitting element and the organic resin film are positioned between the substrate and the oxide semiconductor film.

Claims

1. A light-emitting device comprising:

a light-emitting element;

an organic resin film; and

a film,

wherein the organic resin film is in contact with the light-emitting element,

wherein the light-emitting element comprises a first electrode, an EL layer, and a second electrode,

wherein the film is in contact with the second electrode,

wherein the film is in contact with a side surface of the organic resin film, and

wherein the film contains oxygen and at least one of zinc and gallium.

2. The light-emitting device according to claim 1, further comprising an insulating film,

wherein the insulating film is in contact with the film.

3. The light-emitting device according to claim 1,

wherein the film contains indium, M (M is Al, Ga, Y, Zr, Sn, La, Ce, or Nd), zinc, and oxygen,

wherein the atomic proportion of M is larger than the atomic proportion of indium, and

wherein the atomic proportion of zinc is larger than the atomic proportion of indium.

4. The light-emitting device according to claim 1, further comprising a transistor,

wherein the transistor is connected to the light-emitting element.

5. An electronic appliance comprising:

the light-emitting device according to claim 1; and

a housing.

6. A light-emitting device comprising:

a light-emitting element;

an organic resin film;

a first film; and

a second film,

wherein the organic resin film is in contact with the light-emitting element,

wherein the light-emitting element comprises a first electrode, an EL layer, and a second electrode,

wherein the second film is over the first film and in contact with the first film,

wherein the first film is in contact with the second electrode,

wherein the first film is in contact with a side surface of the organic resin film,

wherein the first film contains oxygen and at least one of zinc and gallium, and

wherein the second film contains indium and oxygen.

7. The light-emitting device according to claim 6,

wherein the first film contains indium, M (M is Al, Ga, Y, Zr, Sn, La, Ce, or Nd), zinc, and oxygen,

wherein the atomic proportion of M is larger than the atomic proportion of indium, and

wherein the atomic proportion of zinc is larger than the atomic proportion of indium.

8. The light-emitting device according to claim 6, further comprising a transistor,

wherein the transistor is connected to the light-emitting element.

9. An electronic appliance comprising:

the light-emitting device according to claim 6; and

a housing.

10. A light-emitting device comprising:

a light-emitting element;

an organic resin film;

a first film; and

a second film,

wherein the organic resin film is in contact with the light-emitting element,

wherein the light-emitting element comprises a first electrode, an EL layer, and a second electrode,

wherein the first film is over the second film and in contact with the second film,

wherein the second film is in contact with the second electrode,

wherein the second film is in contact with a side surface of the organic resin film,

wherein the first film contains oxygen and at least one of zinc and gallium, and

wherein the second film contains indium and oxygen.

11. The light-emitting device according to claim 10,

wherein the first film contains indium, M (M is Al, Ga, Y, Zr, Sn, La, Ce, or Nd), zinc, and oxygen,

wherein the atomic proportion of M is larger than the atomic proportion of indium, and

wherein the atomic proportion of zinc is larger than the atomic proportion of indium.

12. The light-emitting device according to claim 10, further comprising a transistor,

wherein the transistor is connected to the light-emitting element.

13. An electronic appliance comprising:

the light-emitting device according to claim 10; and

a housing.