Semiconductor device, display device, input/output device, and electronic device
First Claim
1. A method for manufacturing a semiconductor device comprising the steps of:
- forming a gate electrode;
forming a first insulating film over the gate electrode;
forming an oxide semiconductor film over the first insulating film;
forming a second insulating film over the oxide semiconductor film; and
adding oxygen into the second insulating film,wherein at least one of the first insulating film and the second insulating film has an etching rate of higher than 8 nm/min when etching is performed using a hydrofluoric acid.
1 Assignment
0 Petitions
Accused Products
Abstract
To suppress change in electric characteristics and improve reliability of a semiconductor device including a transistor formed using an oxide semiconductor. A semiconductor device includes a transistor including a gate electrode, a first insulating film, an oxide semiconductor film, a second insulating film, and a pair of electrodes. The gate electrode and the oxide semiconductor film overlap with each other. The oxide semiconductor film is located between the first insulating film and the second insulating film and in contact with the pair of electrodes. The first insulating film is located between the gate electrode and the oxide semiconductor film. An etching rate of a region of at least one of the first insulating film and the second insulating film is higher than 8 nm/min when etching is performed using a hydrofluoric acid.
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Citations
16 Claims
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1. A method for manufacturing a semiconductor device comprising the steps of:
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forming a gate electrode; forming a first insulating film over the gate electrode; forming an oxide semiconductor film over the first insulating film; forming a second insulating film over the oxide semiconductor film; and adding oxygen into the second insulating film, wherein at least one of the first insulating film and the second insulating film has an etching rate of higher than 8 nm/min when etching is performed using a hydrofluoric acid. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for manufacturing a semiconductor device comprising the steps of:
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forming a gate electrode; forming a first insulating film over the gate electrode; forming an oxide semiconductor film over the first insulating film; forming a second insulating film over the oxide semiconductor film; and adding oxygen into the second insulating film, wherein at least one of the first insulating film and the second insulating film has an etching rate of higher than 8 nm/min when the at least one of the first insulating film and the second insulating film is immersed in a 0.5 wt/vol % hydrofluoric acid at 24°
C. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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Specification