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Semiconductor device, display device, input/output device, and electronic device

  • US 9,876,099 B2
  • Filed: 04/21/2017
  • Issued: 01/23/2018
  • Est. Priority Date: 06/20/2014
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device comprising the steps of:

  • forming a gate electrode;

    forming a first insulating film over the gate electrode;

    forming an oxide semiconductor film over the first insulating film;

    forming a second insulating film over the oxide semiconductor film; and

    adding oxygen into the second insulating film,wherein at least one of the first insulating film and the second insulating film has an etching rate of higher than 8 nm/min when etching is performed using a hydrofluoric acid.

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