Ultraviolet light emitting device doped with boron
First Claim
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1. A light emitting device configured to emit electromagnetic radiation in a range of 210 to 360 nanometers, the device comprising:
- a p-type layer;
an n-type layer;
a thickness of AlyGa1-yN material formed epitaxially and having an aluminum concentration greater than 0% and smaller than 100%;
the thickness of the AlyGa1-yN material comprising a quantum well disposed between the p-type layer and n-type layer; and
wherein the AlyGa1-yN material comprises a boron doping concentration between 1e15 and 1e20 atoms/centimeter.
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Abstract
In an example, the present invention provides a light-emitting device configured to emit electromagnetic radiation in a range of 210 to 360 nanometers. The device has a substrate member comprising a surface region. The device has a thickness of AlGaN material formed overlying the surface region and an aluminum concentration characterizing the AlGaN material having a range of 0 to 100%. The device has a boron doping concentration characterizing the AlGaN material having a range between 1e15 to 1e20 atoms/centimeter3.
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18 Claims
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1. A light emitting device configured to emit electromagnetic radiation in a range of 210 to 360 nanometers, the device comprising:
- a p-type layer;
an n-type layer;
a thickness of AlyGa1-yN material formed epitaxially and having an aluminum concentration greater than 0% and smaller than 100%;
the thickness of the AlyGa1-yN material comprising a quantum well disposed between the p-type layer and n-type layer; and
wherein the AlyGa1-yN material comprises a boron doping concentration between 1e15 and 1e20 atoms/centimeter. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
- a p-type layer;
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18. A light emitting device configured to emit electromagnetic radiation in a range of 210 to 360 nanometers, the device comprising:
- a p-type layer, an n-type layer, and quantum well disposed between the p-type layer and n-type layer;
the quantum well comprising AlyGa1-yN material having aluminum composition greater than 0% and smaller than 100%;
the AlyGa1-yN comprising a first portion with a boron concentration between 1e15 and 1e22 atoms/centimeter and a second portion with no boron, wherein;
the first portion has a first band gap energy;
the second portion has a second band gap energy; and
the first band gap energy is within 0.5 eV of the second band gap energy.
- a p-type layer, an n-type layer, and quantum well disposed between the p-type layer and n-type layer;
Specification