Fabrication of tungsten MEMS structures
First Claim
1. A method for fabricating a microelectromechanical systems (MEMS) device having a tungsten-based MEMS structure, the method comprising:
- depositing a tungsten-based material using a grain growth inhibitor material to form a tungsten-based material layer at least two microns thick above an underlying oxide layer without first densifying the oxide layer; and
etching the tungsten-based material layer to form the tungsten-based MEMS structure.
1 Assignment
0 Petitions
Accused Products
Abstract
Thick (i.e., greater than two microns), fine-grained, low-stress tungsten MEMS structures are fabricated at low temperatures, particularly for so-called “MEMS last” fabrication processes (e.g., when MEMS structures are fabricated after electronic circuitry is fabricated). Means for very accurately etching structural details from the deposited tungsten layer and for strongly and stably anchoring the tungsten layer to an underlying substrate are disclosed. Also, means for removing a sacrificial layer underlying the mobile tungsten layer without damaging the tungsten or allowing it to be drawn down and stuck by surface tension is disclosed.
29 Citations
19 Claims
-
1. A method for fabricating a microelectromechanical systems (MEMS) device having a tungsten-based MEMS structure, the method comprising:
-
depositing a tungsten-based material using a grain growth inhibitor material to form a tungsten-based material layer at least two microns thick above an underlying oxide layer without first densifying the oxide layer; and etching the tungsten-based material layer to form the tungsten-based MEMS structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
-
-
16. A method for fabricating a microelectromechanical systems (MEMS) device having a tungsten-based MEMS structure, the method comprising:
-
a step for depositing a tungsten-based material using a grain growth inhibitor material to form a tungsten-based material layer at least two microns thick above an underlying oxide layer without first densifying the oxide layer; and a step for etching the tungsten-based material layer to form the tungsten-based MEMS structure. - View Dependent Claims (17, 18, 19)
-
Specification