Silicon-based films and methods of forming the same

• US 9,879,340 B2
• Filed: 10/27/2015
• Issued: 01/30/2018
• Est. Priority Date: 11/03/2014
• Status: Active Grant

• Current Assignee: Versum Materials US Inc.
• Original Assignee: Versum Materials US Inc.
• Inventors: Lei, Xinjian, Mallikarjunan, Anupama, MacDonald, Matthew R., Xiao, Manchao
• Primary Examiner(s): Bakshi, Pancham
• Application Number:
  US14/924,098
• Publication Number:
  US 20160122869A1
• Time in Patent Office: 826 Days
• Field of Search: 556406, 556410, 556466
• CPC Class Codes: C23C 16/325 Silicon carbide
• CPC Class Codes: C23C 16/36 Carbonitrides
• CPC Class Codes: C23C 16/401 containing silicon
• CPC Class Codes: C23C 16/45553 characterized by the use of precursors specially adapted for ALD

Abstract

Disclosed herein are containing silicon-based films and compositions and methods for forming the same. The silicon-based films contain <50 atomic % of silicon. In one aspect, the silicon-based films have a composition Si_xC_yN_z wherein x is about 0 to about 55, y is about 35 to about 100, and z is about 0 to about 50 atomic weight (wt.) percent (%) as measured by XPS. In another aspect, the silicon-based films were deposited using at least one organosilicon precursor comprising two silicon atoms, at least one Si-Me group, and an ethylene or propylene linkage between the silicon atoms such as 1,4-disilapentane.

Claims

1. A composition for vapor deposition of a silicon-based film, the composition comprising at least one organosilicon precursor compound having the chemical structure of Formula A:

2. The composition of claim 1 wherein the organosilicon precursor comprises 1-di-iso-propylamino-1,4-disilapentane.

3. The composition of claim 1 further comprising a nitrogen-containing precursor and wherein a ratio of the amount of the nitrogen-containing precursor to the amount of the at least one organosilicon precursor ranges from about 0.25 to about 1.

4. The composition of claim 1 wherein the at least one silicon precursor comprises 1,4-disilapentane.

5. The composition of claim 1 wherein the at least one silicon precursor comprises at least one silicon precursor selected from the group consisting of dimethylamino-1,4-disilapentane, 1-diethylamino-1,4-disilapentane, 1-methylethylamino-1,4-disilapentane, 1-di-n-propylamino-1,4-disilapentane, 1-di-iso-propylamino-1,4-disilapentane, 1-iso-propylamino-1,4-disilapentane, 1-sec-butylamino-1,4-disilapentane, 1-tert-butylamino-1,4-disilapentane, 1-(2,6-dimethylpiperidino)-1,4-disilapentane, 1-piperidino-1,4-disilapentane, 1-(cyclohexyl-iso-propylamino)-1,4-disilapentane, and 1-(n-propyl-iso-propylamino)-1,4-disilapentane.