Silicon-based films and methods of forming the same
First Claim
1. A composition for vapor deposition of a silicon-based film, the composition comprising at least one organosilicon precursor compound having the chemical structure of Formula A:
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Abstract
Disclosed herein are containing silicon-based films and compositions and methods for forming the same. The silicon-based films contain <50 atomic % of silicon. In one aspect, the silicon-based films have a composition SixCyNz wherein x is about 0 to about 55, y is about 35 to about 100, and z is about 0 to about 50 atomic weight (wt.) percent (%) as measured by XPS. In another aspect, the silicon-based films were deposited using at least one organosilicon precursor comprising two silicon atoms, at least one Si-Me group, and an ethylene or propylene linkage between the silicon atoms such as 1,4-disilapentane.
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Citations
5 Claims
- 1. A composition for vapor deposition of a silicon-based film, the composition comprising at least one organosilicon precursor compound having the chemical structure of Formula A:
Specification