Methods and systems for thin film deposition processes

• US 9,879,357 B2
• Filed: 03/11/2013
• Issued: 01/30/2018
• Est. Priority Date: 03/11/2013
• Status: Active Grant

• Current Assignee: Tivra Corporation
• Original Assignee: Tivra Corporation
• Inventors: De, Indranil
• Primary Examiner(s): SONG, MATTHEW J
• Application Number:
  US13/794,372
• Publication Number:
  US 20140251205A1
• Time in Patent Office: 1,786 Days
• Field of Search: 117 84, 117 88, 117 98, 117107
• CPC Class Codes: C30B 13/24 using electromagnetic waves
• CPC Class Codes: C30B 23/02 Epitaxial-layer growth
• CPC Class Codes: C30B 23/04 Pattern deposit, e.g. by using masks
• CPC Class Codes: C30B 23/066 Heating of the material to be evaporated
• CPC Class Codes: C30B 25/105 by irradiation or electric discharge

Abstract

A system for depositing a film on a substrate comprises a lateral control shutter disposed between the substrate and a material source. The lateral control shutter is configured to block some predetermined portion of source material to prevent deposition of source material onto undesirable portion of the substrate. One of the lateral control shutter or the substrate moves with respect to the other to facilitate moving a lateral growth boundary originating from one or more seed crystals. A lateral epitaxial deposition across the substrate ensues, by having an advancing growth front that expands grain size and forms a single crystal film on the surface of the substrate.

Claims

1. A method of depositing a film on a substrate, comprising:

directing source material from a material source onto a surface of the substrate using a line-of-sight deposition method;

blocking, via a shutter, a portion of the substrate to form a blocked substrate portion and an unblocked substrate portion, wherein the shutter is disposed between the substrate and the source material and prevents deposition of the source material onto the blocked portion of the substrate;

positioning the shutter relative to the substrate, into an a first position, wherein the unblocked substrate portion is only a corner of the substrate, and while in the first position;

growing a seed grain with a desired crystallographic orientation in a region of the unblocked substrate portion, wherein the seed grain is employed to initiate crystallization and provide a point of origin for the depositing of the film; and

displacing, from the first position, the shutter relative to the substrate during the deposition of the film such that the blocked substrate portion decreases and the unblocked substrate portion increases, thereby resulting in lateral epitaxial growth across the substrate.

2. The method of claim 1 further comprising growing crystals on the substrate with one or more grains serving as seed crystals.

3. The method of claim 1 further comprising patterning, by applying one of a lithography process, laser heating process and ablation, at least a portion of the substrate to form a surface relief structure, wherein the surface relief structure induces a desired crystalline orientation in the film, wherein the surface relief structure serves as a template for growing a seed grain on the substrate.

4. The method of claim 1 further comprising blocking a portion of the substrate by a trailing control shutter to control or avoid epitaxial deposition on the crystallized film formed on the portion of the substrate blocked by the trailing control shutter.

5. The method of claim 1 further comprising collimating the source material using a collimator disposed between the source material and the substrate.

6. The method of claim 1, wherein the line-of-sight deposition method comprises one of physical vapor deposition and chemical vapor deposition.

7. The method of claim 6, wherein the physical vapor deposition comprises one of vacuum evaporation, sputtering, molecular beam epitaxy, atomic layer deposition, atomic layer epitaxy, plasma torch deposition, and pulsed laser deposition.

8. The method of claim 7, wherein the evaporation method comprises one of thermal evaporation, laser beam or focused lamp evaporation, electron-beam evaporation, or arc-discharge evaporation.

9. The method of claim 7, wherein the sputtering comprises one of direct current magnetron sputtering, radio frequency magnetron sputtering, and laser sputtering.

10. The method of claim 6, wherein the chemical vapor deposition comprises atmospheric pressure chemical vapor deposition.

11. The method of claim 1 further comprising heating the substrate by one of infrared heating, hot wire radiative heating, lasers, focused lamp heating, inductive heating, direct metal pedestal heaters and ceramic pedestal heat sources.