Method to reduce data rates and power consumption using device based attitude quaternion generation
First Claim
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1. A sensor device, comprising:
- a sensor package including,a first silicon substrate including a three-axis microelectromechanical system (MEMS) gyroscope and a three-axis MEMS accelerometer;
a second silicon substrate including a first processor, the second silicon substrate connectively and electrically coupled to the first silicon substrate, the three-axis MEMS gyroscope configured to generate raw gyroscope data with a gyroscope bias, the raw gyroscope data being a measurement output from the three-axis MEMS gyroscope, the first processor configured to receive the raw gyroscope data and remove the gyroscope bias to generate an unbiased gyroscope data, and integrate the unbiased gyroscope data into a gyroscope quaternion at a first rate,wherein the first silicon substrate is vertically stacked and attached to the second silicon substrate within the sensor package,further wherein the sensor package is configured to transmit the integrated gyroscope data at a second rate, the second rate being lower than the first rate.
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Abstract
A method includes generating motion data by receiving a gyroscope data from a gyroscope sensor, performing integration using the gyroscope data and generating an integrated gyroscope data using a first processor. The method further includes receiving a data from one or more sensors, other than the gyroscope sensor, and performing sensor fusion using the integrated gyroscope data and the data to generate motion data using a second processor.
25 Citations
17 Claims
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1. A sensor device, comprising:
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a sensor package including, a first silicon substrate including a three-axis microelectromechanical system (MEMS) gyroscope and a three-axis MEMS accelerometer; a second silicon substrate including a first processor, the second silicon substrate connectively and electrically coupled to the first silicon substrate, the three-axis MEMS gyroscope configured to generate raw gyroscope data with a gyroscope bias, the raw gyroscope data being a measurement output from the three-axis MEMS gyroscope, the first processor configured to receive the raw gyroscope data and remove the gyroscope bias to generate an unbiased gyroscope data, and integrate the unbiased gyroscope data into a gyroscope quaternion at a first rate, wherein the first silicon substrate is vertically stacked and attached to the second silicon substrate within the sensor package, further wherein the sensor package is configured to transmit the integrated gyroscope data at a second rate, the second rate being lower than the first rate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A sensor device comprising:
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a Motion Processing Unit (MPU) including, a three-axis microelectromechanical system (MEMS) gyroscope configured to generate raw gyroscope data, the raw gyroscope data being a measurement output from the three-axis MEMS gyroscope and having a gyroscope bias; a three-axis MEMS accelerometer configured to generate raw accelerometer data; an integration device, wherein the three-axis MEMS accelerometer, three-axis MEMS gyroscope and integration device are formed on a first silicon substrate, a second silicon substrate including a first processor electrically coupled to the first silicon substrate, wherein the first processor is configured to calculate the gyroscope bias and to remove the calculated gyroscope bias from the raw gyroscope data to generate an unbiased gyroscope data, further wherein the integration device is responsive to the unbiased gyroscope data and configured to integrate the unbiased gyroscope data into a gyroscope quaternion at an integration rate and to transmit the integrated gyroscope data at a rate lower than the integration rate, further wherein, the raw accelerometer data and the unbiased gyroscope data are employed with raw compass data from a compass formed on the second silicon substrate, further wherein the first silicon substrate is vertically stacked and attached to the second silicon substrate.
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Specification