Memory device comprising an electrically floating body transistor
First Claim
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1. A memory cell comprising:
- an electrically floating body region comprising a first conductivity type selected from p-type conductivity type and n-type conductivity type;
a source line region comprising a second conductivity type selected from said p-type conductivity type and said n-type conductivity type and being different from said first conductivity type, said source line region in physical contact with said floating body transistor;
a drain region comprising said second conductivity type in physical contact with said floating body region and spaced apart from said source line region; and
a charge injector region, wherein said charge injection region comprises said second conductivity type and is in physical contact with said floating body region and spaced apart from said source line region and said drain region;
a gate region positioned in between said source line region and said drain region, the gate region being positioned between said source line region and said charge injector region, and the gate region being positioned between said drain region and said charge injector region; and
wherein said floating body region is configured to have more than one stable state through an application of a bias on said charge injector region.
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Abstract
A memory cell includes a silicon-on-insulator (SOI) substrate, an electrically floating body transistor fabricated on the silicon-on-insulator (SOI) substrate, and a charge injector region. The floating body transistor is configured to have more than one stable state through an application of a bias on the charge injector region.
229 Citations
18 Claims
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1. A memory cell comprising:
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an electrically floating body region comprising a first conductivity type selected from p-type conductivity type and n-type conductivity type; a source line region comprising a second conductivity type selected from said p-type conductivity type and said n-type conductivity type and being different from said first conductivity type, said source line region in physical contact with said floating body transistor; a drain region comprising said second conductivity type in physical contact with said floating body region and spaced apart from said source line region; and a charge injector region, wherein said charge injection region comprises said second conductivity type and is in physical contact with said floating body region and spaced apart from said source line region and said drain region; a gate region positioned in between said source line region and said drain region, the gate region being positioned between said source line region and said charge injector region, and the gate region being positioned between said drain region and said charge injector region; and wherein said floating body region is configured to have more than one stable state through an application of a bias on said charge injector region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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Specification