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Nonvolatile memory device, operating method thereof and memory system including the same

  • US 9,881,685 B2
  • Filed: 03/17/2017
  • Issued: 01/30/2018
  • Est. Priority Date: 08/26/2010
  • Status: Active Grant
First Claim
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1. A method of erasing a three dimensional (3D) nonvolatile memory device which includes a first memory cell strings and a second memory cell strings, the first memory cell strings and the second memory cell strings including first memory cells and second memory cells respectively, each of the first and the second memory cells being connected in series and stacked in a direction substantially perpendicular to a substrate, the first memory cell strings being connected to a first string selection line and the second memory cell strings being connected to a second string selection line, at least one of the first memory cells and at least one of the second memory cells being connected to a word line and one of the first memory cell strings and one of the second memory cell strings being connected to a bit-line, the method comprising:

  • performing a first erasure operation to first memory cells and the second memory cells by applying a first word line erasure voltage on the word line and applying a first erasure voltage to the substrate;

    performing a first erasure verification operation to the first memory cells after the performing the first erasure operation by applying a first erasure verification voltage on the word line;

    determining whether the first erasure verification passed or failed after the first erasure verification operation; and

    if the first erasure verification is determined to be passed, performing a second erasure verification operation to the second memory cells by applying a second erasure verification voltage on the word line, and if the first erasure verification is determined to be failed, performing a second erasure operation to first memory cells and the second memory cells by applying a second word line erasure voltage on the word line and applying a second erasure voltage to the substrate of the first memory cells and the second memory cells.

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