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Solid state ultracapacitor

  • US 9,881,747 B2
  • Filed: 01/29/2016
  • Issued: 01/30/2018
  • Est. Priority Date: 01/29/2016
  • Status: Active Grant
First Claim
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1. A method of manufacturing a capacitor comprising the steps of:

  • a) obtaining BaTiO3 particles;

    said particles having an average grain diameter of 100-700 nm;

    b) treating said particles in a first furnace under a mixture of 70-96% by volume N2 and 4-30% by volume H2 gas for 60-90 minutes at 850-900°

    C.;

    c) coating said treated particles with a 3-20 nm thick film of SiO2 or a 3-10 nm thick film of Al2O3 whereby said coated treated particles become agglomerated;

    d) separating said coated, treated particles to break up said agglomeration into individual particles;

    e) incorporating said separated, coated, treated particles into an ink comprising;

    i) 60-80% by weight separated, coated, treated particles;

    ii) 5-50% by weight high dielectric constant glass;

    said high dielectric constant glass being 0.5-10 μ

    m in size;

    iii) 0.1-5% by weight surfactant;

    iv) 5-25% by weight solvent; and

    v) 5-25% by weight organic vehicle;

    f) depositing an electrode on a substrate;

    said electrode having a resistance between 1 mΩ and

    10Ω

    ;

    g) sintering said substrate and electrode;

    h) depositing a layer of said ink on said substrate and electrode by a deposition process so that said layer is continuous and has consistent thickness;

    i) removing solvent from said layer by drying for 15-30 minutes at 120-150°

    C. in air;

    j) repeating steps h) and i) until desired thickness is obtained;

    k) removing organic binder by exposing said substrate, electrode and ink to the following heating cycle;

    i) gradually increasing temperature to 280-350°

    C. over 45-90 minutes with a heating rate not exceeding 10-15°

    C. per minuteii) curing at 280-350°

    C. for 4-72 hours;

    iii) allowing said substrate, electrode and ink to cool to ambient temperature;

    l) sintering said at least one layer on said substrate by heating in a second furnace, at 850-900°

    C. for less than 5 minutes and allowing it to cool to ambient under N2 atmosphere;

    said N2 containing less than 25 ppm O2;

    a thickness of said at least one layer being sufficient to produce a sintered layer 10-35 μ

    m thick; and

    m) depositing a top electrode on said at least one layer;

    said top electrode having a resistance between 1 mΩ and

    10Ω

    .

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