Schemes for forming barrier layers for copper in interconnect structures
First Claim
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1. A method of manufacturing a semiconductor device, the method comprising:
- forming a first barrier layer within an opening of a dielectric layer;
filling a remainder of the opening with a conductive material;
removing contaminants from the conductive material; and
forming a second barrier layer onto the conductive material by soaking the conductive material in a carbon-containing silane-based chemical, the second barrier layer comprising a silicide throughout the second barrier layer at an end of the soaking the conductive material, wherein the second barrier layer extends over the first barrier layer but does not extend over the dielectric layer.
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Abstract
A method of forming a semiconductor structure includes providing a substrate; forming a low-k dielectric layer over the substrate; embedding a conductive wiring into the low-k dielectric layer; and thermal soaking the conductive wiring in a carbon-containing silane-based chemical to form a barrier layer on the conductive wiring. A lining barrier layer is formed in the opening for embedding the conductive wiring. The lining barrier layer may comprise same materials as the barrier layer, and the lining barrier layer may be recessed before forming the barrier layer and may contain a metal that can be silicided.
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Citations
20 Claims
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1. A method of manufacturing a semiconductor device, the method comprising:
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forming a first barrier layer within an opening of a dielectric layer; filling a remainder of the opening with a conductive material; removing contaminants from the conductive material; and forming a second barrier layer onto the conductive material by soaking the conductive material in a carbon-containing silane-based chemical, the second barrier layer comprising a silicide throughout the second barrier layer at an end of the soaking the conductive material, wherein the second barrier layer extends over the first barrier layer but does not extend over the dielectric layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of manufacturing a semiconductor device, the method comprising:
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forming a first barrier layer lining an opening in a dielectric layer, the first barrier layer comprising a first element; forming a conductive material within the opening, the conductive material comprising a second element different from the first element; and forming a capping layer over the conductive material and a portion of the first barrier layer in physical contact with a sidewall of the conductive material, at least a portion of the capping layer extending below a topmost surface of the conductive material, the capping layer not extending over the dielectric layer, the forming the capping layer comprising; forming a first material in physical contact with the conductive material, wherein the first material comprises the second element and a third element different from the first element and the second element; and forming a second material in physical contact with the first barrier layer, wherein the second material comprises the first element and the third element. - View Dependent Claims (10, 11, 12, 13, 14)
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15. A method of manufacturing a semiconductor device, the method comprising:
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forming a low-k dielectric layer over a substrate; embedding a conductive wiring in the low-k dielectric layer; and thermal soaking the conductive wiring in a gas with SiH-bonds, a material of the conductive wiring reacting with the gas with SiH-bonds to form a barrier layer on the conductive wiring, the barrier layer comprising a silicide and having a width larger than a width of the conductive wiring. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification