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Schemes for forming barrier layers for copper in interconnect structures

  • US 9,881,871 B2
  • Filed: 08/31/2015
  • Issued: 01/30/2018
  • Est. Priority Date: 11/21/2006
  • Status: Active Grant
First Claim
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1. A method of manufacturing a semiconductor device, the method comprising:

  • forming a first barrier layer within an opening of a dielectric layer;

    filling a remainder of the opening with a conductive material;

    removing contaminants from the conductive material; and

    forming a second barrier layer onto the conductive material by soaking the conductive material in a carbon-containing silane-based chemical, the second barrier layer comprising a silicide throughout the second barrier layer at an end of the soaking the conductive material, wherein the second barrier layer extends over the first barrier layer but does not extend over the dielectric layer.

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