Power FET with a resonant transistor gate
First Claim
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1. A semiconductor FET, comprising a resonant gate and source and drain electrodes, wherein the resonant gate is comprises a plurality of parallel connected branches with each branch having integrally constructed reactive components and/or adjacent segments which reactively couple to each other, and further wherein the parallel connected branches are electromagnetically resonant at one or more predetermined frequencies.
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Abstract
A semiconductor FET provides a resonant gate and source and drain electrodes, wherein the resonant gate is electromagnetically resonant at one or more predetermined frequencies.
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20 Claims
- 1. A semiconductor FET, comprising a resonant gate and source and drain electrodes, wherein the resonant gate is comprises a plurality of parallel connected branches with each branch having integrally constructed reactive components and/or adjacent segments which reactively couple to each other, and further wherein the parallel connected branches are electromagnetically resonant at one or more predetermined frequencies.
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