Wafer-level light emitting diode and wafer-level light emitting diode package

• US 9,882,102 B2
• Filed: 08/25/2016
• Issued: 01/30/2018
• Est. Priority Date: 09/24/2010
• Status: Active Grant

• Current Assignee: Seoul Semiconductor Co., Ltd.
• Original Assignee: Seoul Semiconductor Co., Ltd.
• Inventors: Seo, Won Cheol, Cho, Dae Sung
• Primary Examiner(s): NGUYEN, CUONG QUANG
• Application Number:
  US15/247,516
• Publication Number:
  US 20160365382A1
• Time in Patent Office: 523 Days
• CPC Class Codes: H01L 27/15 including semiconductor components having potential barriers, specially adapted for light emission
• CPC Class Codes: H01L 27/153 in a repetitive configuration, e.g. LED bars
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 2933/0025 relating to coatings
• CPC Class Codes: H01L 2933/0033 relating to semiconductor body packages
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 2933/005 relating to encapsulations
• CPC Class Codes: H01L 2933/0066 relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 2933/0075 relating to heat extraction or cooling elements
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01L 33/32 : containing nitrogen
• CPC Class Codes: H01L 33/38 : with a particular shape
• CPC Class Codes: H01L 33/382 : the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/385 : the electrode extending at least partially onto a side surface of the semiconductor body
• CPC Class Codes: H01L 33/405 : Reflective materials
• CPC Class Codes: H01L 33/42 : Transparent materials
• CPC Class Codes: H01L 33/44 : characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/46 : Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/486 : adapted for surface mounting
• CPC Class Codes: H01L 33/50 : Wavelength conversion elements
• CPC Class Codes: H01L 33/502 : Wavelength conversion materials
• CPC Class Codes: H01L 33/505 : characterised by the shape, e.g. plate or foil
• CPC Class Codes: H01L 33/507 : the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
• CPC Class Codes: H01L 33/56 : Materials, e.g. epoxy or silicone resin
• CPC Class Codes: H01L 33/58 : Optical field-shaping elements
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: H01L 33/642 : characterized by the shape
• CPC Class Codes: H01L 33/647 : the elements conducting electric current to or from the semiconductor body

Abstract

A light-emitting diode including a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first and second semiconductor layers, wherein the second semiconductor layer and the active layer provide a contact region exposing the first semiconductor layer, a first bump arranged on a first side of the semiconductor stack and being electrically connected to the first semiconductor layer via the contact region, a second bump arranged on the first side of the semiconductor stack and being electrically connected to the second semiconductor layer, a first insulation layer disposed covering a side surface of the first bump, and a wavelength converter disposed on a second side of the semiconductor stack. The wavelength converter laterally extends beyond the semiconductor stack. The first insulation layer includes a side surface that is flush with a side surface of the wavelength converter.

Claims

1. A light-emitting diode (LED) package, comprising:

a first semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first and second semiconductor layers, wherein the second semiconductor layer and the active layer provide a contact region exposing the first semiconductor layer;

a first pad arranged on a first side of the first semiconductor stack and being electrically connected to the first semiconductor layer via the contact region of the first semiconductor layer;

a second pad arranged on the first side of the first semiconductor stack and being electrically connected to the second semiconductor layer;

a conductive element arranged on the first side of the semiconductor stack and disposed between the first pad and the second pad; and

a first insulation layer covering the conductive element.

2. The LED of claim 1, further comprising:

a first bump arranged on a first side of the first semiconductor stack, the first bump being electrically connected to the first semiconductor layer via the contact region of the first semiconductor layer; and

a second bump arranged on the first side of the first semiconductor stack, the second bump being electrically connected to the second semiconductor layer.

3. The LED package of claim 1, further comprising a second insulation layer disposed between the first semiconductor stack and the conductive element, wherein the conductive element is disposed directly on a second insulation layer.

4. The LED package of claim 3, further comprising a third insulation layer disposed between the second insulation layer and the first semiconductor stack.

5. The LED package of claim 4, wherein the conductive element comprises a connector that electrically connects the first semiconductor stack of a first light emitting cell to a second semiconductor stack of a second cell.

6. The LED package of claim 1, wherein the conductive element is disposed in a center region of the LED package in a plan view.

7. The LED package of claim 1, wherein first and second pads have heights that are higher than a height of the conductive element.

8. The LED package of claim 2, wherein the conductive element comprises a dummy bump disposed between the first and second bumps.

9. A light-emitting diode (LED), comprising:

a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first and second semiconductor layers, wherein the second semiconductor layer and the active layer provide a contact region exposing the first semiconductor layer;

a first pad arranged on the first side of the semiconductor stack and being electrically connected to the first semiconductor layer via the contact region of the first semiconductor layer;

a second pad arranged on the first side of the semiconductor stack and being electrically connected to the second semiconductor layer;

a conductive element arranged on the first side of the semiconductor stack and disposed between the first pad and the second pad; and

a first insulation layer covering the covering the conductive element

wherein the first insulation layer is arranged between the first pad and the conductive element.