Magnetic memory devices including in-plane current layers

• US 9,882,120 B2
• Filed: 12/02/2015
• Issued: 01/30/2018
• Est. Priority Date: 12/17/2014
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Ahn, Sungmin, Ryu, Jisu
• Primary Examiner(s): Erdem, Fazli
• Application Number:
  US14/956,766
• Publication Number:
  US 20160181512A1
• Time in Patent Office: 790 Days
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• CPC Class Codes: H10B 61/22 of the field-effect transistor [FET] type
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: H10N 50/10 Magnetoresistive devices

Abstract

A magnetic memory device can include an upper electrode, a lower electrode and a Magnetic Tunnel Junction (MTJ). The MTJ can include a reference magnetic pattern configured to generate a fixed magnetization and a free magnetic pattern on the reference magnetic pattern configured to generate a switchable magnetization that switches direction between parallel and anti-parallel to the fixed magnetization. A metal pattern can be on the free magnetic pattern and can be configured to conduct an in-plane current and a perpendicular-to-plane to/from the upper electrode.

Claims

1. A magnetic memory device, comprising:

a lower electrode;

a magnetic tunnel junction on the lower electrode; and

a capping electrode on the magnetic tunnel junction,

wherein the magnetic tunnel junction comprises;

a reference magnetic pattern having a fixed magnetization direction;

a free magnetic pattern having a switchable magnetization direction;

a tunnel barrier pattern between the reference magnetic pattern and the free magnetic pattern;

a sub oxide pattern on the free magnetic pattern; and

a metal pattern between the sub oxide pattern and the free magnetic pattern,

the fixed and switchable magnetization directions are substantially perpendicular to top surfaces of the reference and free magnetic patterns defining the magnetic tunnel junction, and

the capping electrode is asymmetrically centered at a position that is offset from a center of the magnetic tunnel junction defined by an axis passing through upper and lower surfaces of the magnetic tunnel junction.

2. The device of claim 1, wherein the metal pattern comprises at least one of a transition metal and a rare-earth metal.

3. The device of claim 1, wherein the metal pattern has a thickness ranging from about 0.5 to about 2 nm.

4. The device of claim 1, wherein the capping electrode is disposed to expose at least a portion of an upper surface of the sub oxide pattern.

5. The device of claim 1, wherein the magnetic tunnel junction has first and second maximum widths, respectively, measured in first and second directions parallel to the top surfaces of the reference and free magnetic patterns, and the first and second directions are perpendicular to each other, and

the first maximum width is greater than the second maximum width.

6. The device of claim 5, wherein the capping electrode is disposed at an edge of the magnetic tunnel junction in the first direction.

7. The device of claim 5, wherein the capping electrode has a width that is less than the second maximum width.