Gallium and nitrogen containing laser device having confinement region

• US 9,882,353 B2
• Filed: 11/18/2016
• Issued: 01/30/2018
• Est. Priority Date: 10/18/2013
• Status: Active Grant

• Current Assignee: Kyocera SLD Laser Incorporated (Kyocera Corporation)
• Original Assignee: Soraa Laser Diode, Inc. (Kyocera Corporation)
• Inventors: Hsu, Po Shan, McLaurin, Melvin, Raring, James W., Sztein, Alexander, Buller, Benyamin
• Primary Examiner(s): Karimy, TImor
• Application Number:
  US15/356,302
• Publication Number:
  US 20170077677A1
• Time in Patent Office: 438 Days
• Field of Search: 438 33, 438 68, 438113, 438460, 438 91, 438237, 438 27
• CPC Class Codes: H01S 2304/00 Special growth methods for semiconductor lasers
• CPC Class Codes: H01S 5/0202 Cleaving
• CPC Class Codes: H01S 5/0215 Bonding to the substrate
• CPC Class Codes: H01S 5/0217 Removal of the substrate
• CPC Class Codes: H01S 5/04253 having specific optical properties, e.g. transparent electrodes
• CPC Class Codes: H01S 5/04254 characterised by the shape
• CPC Class Codes: H01S 5/22 having a ridge or stripe structure
• CPC Class Codes: H01S 5/34333 with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Abstract

A method for fabricating a laser diode device includes providing a gallium and nitrogen containing substrate member having a surface region, forming a patterned dielectric material overlying the surface region to expose a portion of the surface region within a vicinity of an recessed region of the patterned dielectric material and maintaining an upper portion of the patterned dielectric material overlying covered portions of the surface region, and performing a lateral epitaxial growth overlying the exposed portion of the surface region to fill the recessed region and causing a thickness of the lateral epitaxial growth to be formed overlying the upper portion of the patterned dielectric material. The method also includes forming an n-type gallium and nitrogen containing material, forming an active region, and forming a p-type gallium and nitrogen containing material. The method further includes forming a waveguide structure in the p-type gallium and nitrogen containing material.

Claims

1. A method for fabricating a laser diode device comprising:

providing a gallium and nitrogen containing substrate member comprising a surface region;

forming a patterned dielectric material overlying the surface region to expose a portion of the surface region within a vicinity of an recessed region of the patterned dielectric material and maintaining an upper portion of the patterned dielectric material overlying covered portions of the surface region;

performing a lateral epitaxial growth overlying the exposed portion of the surface region to fill the recessed region overlying the exposed portion and causing a thickness of the lateral epitaxial growth to be formed overlying the upper portion of the patterned dielectric material;

forming an n-type gallium and nitrogen containing material overlying the patterned dielectric material;

forming an active region overlying the n-type gallium and nitrogen containing material;

forming a p-type gallium and nitrogen containing material;

forming a waveguide structure in the p-type gallium and nitrogen containing material; and

forming a transparent conductive oxide material overlying an exposed portion of the p-type gallium and nitrogen containing material such that active region is configured between the patterned dielectric material and the transparent conductive oxide material to cause an optical guiding effect within the active region.

2. The method of claim 1, wherein the transparent conductive oxide is comprised of indium tin oxide or zinc oxide;

wherein the dielectric material is comprised of silicon oxide or silicon nitride.

3. The method of claim 1, wherein surface region of the gallium and nitrogen containing substrate is configured in a semipolar, polar, or non-polar orientation;

wherein the active region comprises a plurality of quantum well regions.