Resonant type high frequency power supply device and switching circuit for resonant type high frequency power supply device

• US 9,882,435 B2
• Filed: 10/31/2013
• Issued: 01/30/2018
• Est. Priority Date: 10/31/2013
• Status: Active Grant

• Current Assignee: Mitsubshi Electric Engineering Company Limited (Mitsubishi Electric Corporation)
• Original Assignee: Mitsubshi Electric Engineering Company Limited (Mitsubishi Electric Corporation)
• Inventors: Akuzawa, Yoshiyuki, Sakai, Kiyohide, Ezoe, Toshihiro, Ito, Yuki
• Primary Examiner(s): Benitez, Gustavo Rosario
• Application Number:
  US15/027,154
• Publication Number:
  US 20160254700A1
• Time in Patent Office: 1,552 Days
• CPC Class Codes: H02J 50/05 using capacitive coupling
• CPC Class Codes: H02J 50/12 of the resonant type
• CPC Class Codes: H02M 7/48 using discharge tubes with control electrode or semiconductor devices with control electrode
• CPC Class Codes: H02M 7/4815 Resonant converters H02M7/4811 and H02M7/4826 take precedence
• CPC Class Codes: H02M 7/4818 with means for adaptation of resonance frequency, e.g. by modification of capacitance or inductance of resonance circuits
• CPC Class Codes: Y02B 70/10 Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Abstract

A resonant type high frequency power supply device provided with a power semiconductor element that performs a switching operation, the power supply device including a second power semiconductor element at least one or more connected in parallel to the power semiconductor element to achieve optimization of parasitic capacitances of the power semiconductor element and the second power semiconductor element itself, and a high frequency pulse drive circuit that transmits a pulse-shaped voltage signal having a high frequency exceeding 2 MHz to the power semiconductor element and the second power semiconductor element to drive the power semiconductor element and the second power semiconductor element.

Claims

1. A resonant type high frequency power supply device comprising:

a first power semiconductor element that performs a switching operation to convert a direct voltage to a high frequency alternating voltage;

a second power semiconductor element connected in parallel to said first power semiconductor element, said second power element having a parasitic capacitance; and

a high frequency pulse drive circuit that drives said first power semiconductor element and said second power semiconductor element by applying a pulse-shaped voltage,

wherein a peak value of a resonant voltage at a drain terminal of said first power semiconductor element is 3 to 5 times a value of said direct voltage due to said parasitic capacitance of said second power semiconductor element.

2. The resonant type high frequency power supply device according to claim 1, further comprising at least one diode or more connected in parallel to said first power semiconductor element.

3. The resonant type high frequency power supply device according to claim 1, wherein said first power semiconductor element is a Si-MOSFET, a SiC-MOSFET or a GaN-FET.

4. The resonant type high frequency power supply device according to claim 1, wherein said first and second power semiconductor elements have a push-pull type configuration or a single type configuration.

5. The resonant type high frequency power supply device according to claim 1, further comprising a variable impedance matching circuit that includes a variable capacitor and a variable inductor.

14. The resonant type high frequency power supply device according to claim 1, further comprising:

a signal line connecting said high frequency pulse drive circuit to a gate terminal of said first power semiconductor element, and

said peak value of said resonant voltage at said drain terminal of said first power semiconductor element is 3 to 5 times said value of said direct voltage further due to an impedance of said signal line.

15. The resonant type high frequency power supply device according to claim 1, wherein said peak value of said resonant voltage at said drain terminal of said first power semiconductor element is 3 to 5 times said value of said direct voltage due to parasitic capacitance of said first power semiconductor element that includes a gate to drain parasitic capacitance.

16. The resonant type high frequency power supply device according to claim 15, wherein said peak value of said resonant voltage at said drain terminal of said first power semiconductor element is 3 to 5 times said value of said direct voltage due to said parasitic capacitance of said first power semiconductor element that further includes a drain to source parasitic capacitance.

6. A switching circuit for a resonant type high frequency power supply device, said switching circuit comprising:

a first power semiconductor element that performs a switching operation to convert a direct voltage to a high frequency alternating voltage;

a second power semiconductor element connected in parallel to said first power semiconductor element, said second power semiconductor element having a parasitic capacitance; and

a high frequency pulse drive circuit that drives said first power semiconductor element and said second power semiconductor element by applying a pulse-shaped voltage,

wherein a peak value of a resonant voltage at a drain terminal of said first power semiconductor element is 3 to 5 times a value of said direct voltage due to said parasitic capacitance of said second power semiconductor element.

7. The switching circuit according to claim 6, further comprising:

a signal line connecting said high frequency drive circuit to a gate terminal of said first power semiconductor element, and

said peak value of said resonant voltage at said drain terminal of said first power semiconductor element is 3 to 5 times said value of said direct voltage further due to an impedance of said signal line.

8. The switching circuit device according to claim 6, wherein said peak value of said resonant voltage at said drain terminal of said first power semiconductor element is 3 to 5 times said value of said direct voltage due to parasitic capacitance of said first power semiconductor element that includes a gate to drain parasitic capacitance.

9. The switching circuit according to claim 8, wherein said peak value of said resonant voltage at said drain terminal of said first power semiconductor element is 3 to 5 times said value of said direct voltage due to said parasitic capacitance of said first power semiconductor element that further includes a drain to source parasitic capacitance.

10. A resonant type high frequency power supply device comprising:

a first power semiconductor element that performs a switching operation to convert a direct voltage to a high frequency alternating voltage;

a second power semiconductor element connected in parallel to said first power semiconductor element, said second power semiconductor element having a parasitic capacitance; and

a high frequency drive circuit that drives said first power semiconductor element and said second power semiconductor element by applying a voltage,

wherein a peak value of a resonant voltage at a drain terminal of said first power semiconductor element is 3 to 5 times a value of said direct voltage due to said parasitic capacitance of said second power semiconductor element.

11. The resonant type high frequency power supply device according to claim 10, further comprising:

a signal line connecting said high frequency drive circuit to a gate terminal of said first power semiconductor element, and

said peak value of said resonant voltage at said drain terminal of said first power semiconductor element is 3 to 5 times said value of said direct voltage further due to an impedance of said signal line.

12. The resonant type high frequency power supply device according to claim 10, wherein said peak value of said resonant voltage at said drain terminal of said first power semiconductor element is 3 to 5 times said value of said direct voltage due to parasitic capacitance of said first power semiconductor element that includes a gate to drain parasitic capacitance.

13. The resonant type high frequency power supply device according to claim 12, wherein said peak value of said resonant voltage at said drain terminal of said first power semiconductor element is 3 to 5 times said value of said direct voltage due to said parasitic capacitance of said first power semiconductor element that further includes a drain to source parasitic capacitance.