Resonant type high frequency power supply device and switching circuit for resonant type high frequency power supply device

• US 9,882,509 B2
• Filed: 10/31/2013
• Issued: 01/30/2018
• Est. Priority Date: 10/31/2013
• Status: Active Grant

• Current Assignee: Mitsubshi Electric Engineering Company Limited (Mitsubishi Electric Corporation)
• Original Assignee: Mitsubshi Electric Engineering Company Limited (Mitsubishi Electric Corporation)
• Inventors: Akuzawa, Yoshiyuki, Sakai, Kiyohide, Ezoe, Toshihiro, Ito, Yuki
• Primary Examiner(s): ROSARIO BENITEZ, GUSTAVO A
• Application Number:
  US15/028,650
• Publication Number:
  US 20160241160A1
• Time in Patent Office: 1,552 Days
• CPC Class Codes: H02J 2207/20 Charging or discharging characterised by the power electronics converter
• CPC Class Codes: H02J 50/12 of the resonant type
• CPC Class Codes: H02M 1/0058 by employing soft switching techniques, i.e. commutation of transistors when applied voltage is zero or when current flow is zero using an auxiliary actively switched resonant commutation circuit connected to an intermediate DC voltage or between two push-pull branches of an inverter bridge H02M7/4811; in resonant inverters H02M7/4815; in inverters operating from a resonant DC source H02M7/4826
• CPC Class Codes: H02M 7/4815 Resonant converters H02M7/4811 and H02M7/4826 take precedence
• CPC Class Codes: H02M 7/533 using discharge tubes only
• CPC Class Codes: H02M 7/537 using semiconductor devices only, e.g. single switched pulse inverters
• CPC Class Codes: H02M 7/53832 in a push-pull arrangement
• CPC Class Codes: Y02B 40/00 Technologies aiming at improving the efficiency of home appliances, e.g. induction cooking or efficient technologies for refrigerators, freezers or dish washers
• CPC Class Codes: Y02B 70/10 Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Abstract

Disclosed is a resonant type high frequency power supply device provided with a power element that performs a switching operation, the power supply device including a high frequency pulse drive circuit 1 that transmits a pulse-shaped voltage signal having a high frequency exceeding 2 MHz to the power element to drive the power element, wherein a voltage signal from the high frequency pulse drive circuit 1 is subjected to partial resonance by an impedance of a signal line of the voltage signal and a parasitic capacitance of the power element.

Claims

1. A high frequency power supply device, comprising:

a power element that performs a switching operation, said power element having a gate terminal and a parasitic capacitance; and

a high frequency pulse drive circuit that generates a pulse-shaped voltage signal for driving the gate of said power element through a connection having an impedance, said pulse-shaped voltage signal having a high frequency exceeding 2 MHz, wherein a peak of a voltage signal applied to said gate terminal is higher than an amplitude of said pulse-shaped voltage signal generated by said high frequency pulse drive circuit due to the parasitic capacitance of said power element and the impedance of the connection between said high frequency pulse drive circuit and said gate terminal;

wherein;

said parasitic capacitance and said impedance cause said pulse-shaped voltage signal to resonate so that said peak of said voltage signal applied to said gate terminal becomes higher than said amplitude of said pulse-shaped voltage signal generated by said high frequency pulse drive circuit.

2. The high frequency power supply device according to claim 1, wherein:

said power element is a Si-MOSFET, a SiC-MOSFET or a GaN-FET.

3. The high frequency power supply device according to claim 1, wherein:

said power element includes a push-pull type configuration or a single type configuration.

4. The high frequency power supply device according to claim 1, wherein:

said voltage signal applied to said gate terminal includes a half wave sine waveform due to said parasitic capacitance and said impedance.

5. The high frequency power supply device according to claim 1, wherein

said impedance is an impedance of the connection which is a signal line that connects said high frequency pulse drive circuit with said gate terminal.

6. The high frequency power supply device according to claim 1, said device further comprising:

a matching circuit that has an inductor and a condenser, at least one of said inductor and said condenser is variable-type.

12. The high frequency power supply device according to claim 1, wherein:

the parasitic capacitance of said power element includes a gate to source capacitance of said power element, and a gate to drain capacitance of said power element.

7. A switching circuit for a high frequency power supply device, said switching circuit comprising:

a power element that performs a switching operation and being used for the high frequency power supply device, said power element including a gate terminal and a parasitic capacitance; and

a high frequency pulse drive circuit that generates a pulse-shaped voltage signal for driving said power element through a connection having an impedance, said pulse-shaped voltage signal having a high frequency exceeding 2 MHz, wherein a peak of a voltage signal applied to said gate terminal is higher than an amplitude of said pulse-shaped voltage signal generated by said high frequency pulse drive circuit due to the parasitic capacitance of said power element and the impedance of the connection between said high frequency pulse drive circuit and said gate terminal;

wherein;

said parasitic capacitance and said impedance cause said pulse-shaped voltage signal to resonate so that said peak of said voltage signal applied to said gate terminal becomes higher than said amplitude of said pulse-shaped voltage signal generated by said high frequency pulse drive circuit.

8. The switching circuit for the high frequency power supply device according to claim 7, wherein:

said voltage signal applied to said gate terminal includes a half wave sine waveform due to said parasitic capacitance and said impedance.

9. The switching circuit for the high frequency power supply device according to claim 7, wherein:

said impedance is an impedance of the connection which is a signal line that connects said high frequency pulse drive circuit with said gate terminal.

10. The switching circuit for the high frequency power supply device according to claim 7, wherein said switching circuit further comprises:

a capacitor that causes a resonance condition to match that of a transmission antenna for power transmission.

11. The switching circuit for the high frequency power supply device according to claim 7, wherein:

the parasitic capacitance of said power element includes a gate to source capacitance of said power element, and a gate to drain capacitance of said power element.