Conditioned semiconductor system parts

• US 9,885,117 B2
• Filed: 02/11/2015
• Issued: 02/06/2018
• Est. Priority Date: 03/31/2014
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Lubomirsky, Dmitry, Kim, Sung Je
• Primary Examiner(s): Alanko, Anita K
• Application Number:
  US14/619,474
• Publication Number:
  US 20150275361A1
• Time in Patent Office: 1,091 Days
• CPC Class Codes: C23C 14/22 characterised by the process of coating
• CPC Class Codes: C23C 16/45525 Atomic layer deposition [ALD]
• CPC Class Codes: C23C 16/45527 characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
• CPC Class Codes: C23C 16/50 using electric discharges generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34
• CPC Class Codes: C23C 22/56 Treatment of aluminium or alloys based thereon
• CPC Class Codes: C23C 22/66 Treatment of aluminium or alloys based thereon
• CPC Class Codes: C23F 1/16 Acidic compositions C23F1/42 takes precedence
• CPC Class Codes: C23F 1/20 for etching aluminium or alloys thereof
• CPC Class Codes: C23F 1/32 Alkaline compositions C23F1/42 takes precedence
• CPC Class Codes: C23F 1/36 for etching aluminium or alloys thereof
• CPC Class Codes: H01J 37/32009 Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources plasma generation in general H05H1/24
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32532 Electrodes
• CPC Class Codes: H01J 37/3255 Material
• CPC Class Codes: H01L 21/67069 for drying etching
• CPC Class Codes: H01L 21/67248 Temperature monitoring
• CPC Class Codes: H01L 21/67253 Process monitoring, e.g. flow or thickness monitoring
• CPC Class Codes: H01L 21/67306 characterized by a material, a roughness, a coating or the like
• CPC Class Codes: Y10T 428/24322 Composite web or sheet
• CPC Class Codes: Y10T 428/24355 Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]

Abstract

A method for conditioning a semiconductor chamber component may include passivating the chamber component with an oxidizer. The method may also include performing a number of chamber process operation cycles in a semiconductor processing chamber housing the chamber component until the process is stabilized. The number of chamber operation cycles to stabilize the process may be less than 10% of the amount otherwise used with conventional techniques.

Claims

1. A method of conditioning a semiconductor chamber component, the method comprising:

passivating the chamber component with an oxidizer, wherein the chamber component comprises an aluminum chamber component, and wherein the passivating comprises;

exposing the chamber component to an acid solution for a first period of time; and

subsequently exposing the chamber component to a basic solution for a second period of time; and

performing a number of chamber process operation cycles in a semiconductor processing chamber housing the chamber component until the process is stabilized, wherein the number of chamber operation cycles to stabilize the process is less than 3,000, wherein the chamber process is an etch process, and wherein the chamber process is stabilized when it performs consistently to within +/−

20% etch amount between operation cycles.

2. The method of claim 1, wherein the process is stabilized when it performs consistently to within +/−

10% etch amount between operation cycles.

3. The method of claim 1, wherein the number of chamber operation cycles to stabilize the process is less than 100.

4. The method of claim 1, wherein the acid solution comprises an acid selected from the group consisting of nitric acid (HNO₃), sulfuric acid (H₂SO₄), hydrochloric acid (HCl), and hydrofluoric acid (HF).

5. The method of claim 4, wherein the acid comprises nitric acid at a concentration greater than 25%.

6. The method of claim 1, wherein the basic solution comprises an aqueous solution of ammonia.

7. The method of claim 6, wherein the aqueous solution of ammonia is at a concentration greater than 10%.

8. The method of claim 1, wherein the passivation operation is performed for a time greater than about 5 minutes.

9. The method of claim 1, wherein the passivation operation is performed at a temperature of less than about 50°

C.

10. The method of claim 1, wherein exposing the chamber component to an acid solution comprises dipping the chamber component in a first bath comprising the acid solution for a time period greater than about 10 minutes, and wherein subsequently exposing the chamber component to a basic solution comprises dipping the component in a second bath comprising the basic solution for a time period less than about 3 minutes.

11. The method of claim 1, further comprising coating at least a portion of the chamber component with a protective material subsequent to the passivation operation.

13. The method of claim 11, wherein the chamber component is at least partially coated with yttrium oxide.

14. The method of claim 13, wherein a yttrium oxide coating is applied to at least a portion of the chamber component subsequent passivating the chamber component.

12. A method of conditioning an aluminum semiconductor chamber component, comprising:

machining a plurality of apertures through the chamber component;

dipping the chamber component in an oxidizer bath comprising nitric acid (HNO₃) at a concentration greater than 25%, for a time period less than about 30 minutes, and at a temperature less than about 25°

C.;

subsequently dipping the chamber component in a bath of a basic solution; and

performing a number of chamber process operation cycles in a semiconductor processing chamber housing the chamber component until the process is stabilized, wherein the number of chamber operation cycles to stabilize the process is less than about 50, wherein the chamber process is an etch process, and wherein the chamber process is stabilized when it performs consistently to within +/−

20% etch amount between operation cycles.