Multiple pre-clean processes for interconnect fabrication

• US 9,887,160 B2
• Filed: 09/24/2015
• Issued: 02/06/2018
• Est. Priority Date: 09/24/2015
• Status: Active Grant

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Spooner, Terry A., Wang, Wei, Yang, Chih-chao
• Primary Examiner(s): Fan, Michele
• Application Number:
  US14/864,058
• Publication Number:
  US 20170092590A1
• Time in Patent Office: 866 Days
• CPC Class Codes: H01L 21/02063 the processing being the formation of vias or contact holes
• CPC Class Codes: H01L 21/3115 Doping the insulating layers
• CPC Class Codes: H01L 21/32136 using plasmas
• CPC Class Codes: H01L 21/76805 the opening being a via or contact hole penetrating the underlying conductor
• CPC Class Codes: H01L 21/76814 post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
• CPC Class Codes: H01L 21/76826 by contacting the layer with gases, liquids or plasmas
• CPC Class Codes: H01L 21/76831 in via holes or trenches, e.g. non-conductive sidewall liners
• CPC Class Codes: H01L 21/7684 Smoothing; Planarisation
• CPC Class Codes: H01L 21/76877 Filling of holes, grooves or trenches, e.g. vias, with conductive material
• CPC Class Codes: H01L 21/76883 Post-treatment or after-treatment of the conductive material
• CPC Class Codes: H01L 23/53238 Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 23/53295 Stacked insulating layers

Abstract

A method of making an interconnect structure includes forming an opening within a dielectric material layer disposed on a substrate including a conductive material, the opening extending from a first surface to a second surface of the dielectric material layer and being in contact with a portion of the substrate; performing a plasma treatment process to chemically enrich exposed surfaces of the dielectric material that line the opening to form a chemically-enriched dielectric surface layer that included an element in a higher concentration than a remaining portion of the dielectric material layer; performing a chemical treatment process to remove a metal contact product from the portion of the substrate that is in contact with the opening; and disposing a conductive material in the opening to substantially fill the opening and form the interconnect structure.

Claims

1. An interconnect structure, comprising:

a substrate comprising a conductive material;

a dielectric material layer disposed on the substrate and comprising an opening extending from a first surface to a second surface of the dielectric material layer that contacts a portion of the substrate;

a chemically-modified dielectric surface layer formed on exposed surfaces lining sidewalls of the opening within the dielectric material layer, the chemically-modified dielectric surface layer being more dense than the dielectric material layer and comprising a plasma contact product, the plasma contact product being a first reaction product of the dielectric material layer and plasma, the plasma being a silicon-containing plasma, a nitrogen-containing plasma, a phosphorus-containing plasma, a boron-containing plasma, or an oxygen-containing plasma, and the chemically-modified dielectric material layer comprising a higher concentration of silicon, nitrogen, phosphorus, boron, or oxygen than the dielectric material layer; and

a layer of plasma metal contact product arranged on the conductive material of the substrate at an end of the opening within the dielectric material layer, the layer of plasma metal contact product being a second reaction product of the conductive material and the silicon-containing plasma, the nitrogen-containing plasma, the phosphorus-containing plasma, the boron-containing plasma, or the oxygen-containing plasma.

2. The interconnect structure of claim 1, wherein the dielectric material layer is silicon dioxide, a silsesquioxane, a carbon-doped oxide, a thermosetting polyarylene ether, or any combination thereof.

3. The interconnect structure of claim 1, wherein the dielectric material layer further comprises another opening extending from the first surface into the dielectric material layer.