Method of fabricating memory array having divided apart bit lines and partially divided bit line selector switches
First Claim
1. A method of fabricating a non-volatile data storage device comprising:
- providing a substrate having control elements monolithically integrated therein;
providing above the substrate as a first structure, a three dimensional arrangement of non-volatile storage elements, and alternating horizontally extending layers of conductive word line layers and insulative layers;
providing above the substrate and below the first structure, material layers for forming a three dimensional arrangement of vertically oriented, bit line selector devices, where the provided material layers can be patterned so that each of the formable, vertically oriented bit line selector devices has a respective output terminal and a respective control terminal;
providing above the substrate and below the formable control terminals of the formable bit line selector devices, a plurality of spaced apart global bit lines;
patterning the alternating layers of conductive word line layers and insulative layers so as to form spaced apart pillars each having the alternating layers of conductive word lines and insulation, the pillars having respective vertically extending sidewalls;
depositing vertically extending films of memory cell forming material on the sidewalls of the pillars;
depositing vertically extending films of bit line forming conductive material on sidewalls of the deposited films of memory cell forming material, the bit line forming films also extending horizontally at respective bottoms of the bit line forming films so as to continue one into the next, the respective bottoms of the bit line forming films making electrical coupling with the formable output terminals of corresponding ones of the formable, vertically oriented bit line selector devices respectively disposed below the respective films of memory cell forming material;
creating electrically isolating separations between the deposited films of bit line forming conductive material so as to form vertically extending individual bit lines such that each individual bit line is electrically isolated from adjacent other individual bit lines extending vertically along adjacent vertically extending sidewalls of adjacent pillars; and
creating electrically isolating separations in the material layers provided for forming the formable, vertically oriented bit line selector devices so as to thereby define individual output terminals for respective ones of the vertically oriented bit line selector devices, the defined individual output terminals respectively connecting to respective ones of the vertically extending individual bit lines formed above the defined individual output terminals.
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Accused Products
Abstract
A non-volatile data storage device comprises pairs of immediately adjacent and isolated-from-one-another local bit lines that are independently driven by respective and vertically oriented bit line selector devices. The isolation between the immediately adjacent and isolated-from-one-another local bit lines also isolates from one another respective memory cells of the non-volatile data storage device such that leakage currents cannot flow from memory cells connected to a first of the immediately adjacent and isolated-from-one-another local bit lines to memory cells connected to the second of the pair of immediately adjacent and isolated-from-one-another local bit lines. A method programming a desire one of the memory cells includes applying boosting voltages to word lines adjacent to the bit line of the desired memory cell while not applying boosting voltages to word lines adjacent to the other bit line of the pair.
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Citations
20 Claims
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1. A method of fabricating a non-volatile data storage device comprising:
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providing a substrate having control elements monolithically integrated therein; providing above the substrate as a first structure, a three dimensional arrangement of non-volatile storage elements, and alternating horizontally extending layers of conductive word line layers and insulative layers; providing above the substrate and below the first structure, material layers for forming a three dimensional arrangement of vertically oriented, bit line selector devices, where the provided material layers can be patterned so that each of the formable, vertically oriented bit line selector devices has a respective output terminal and a respective control terminal; providing above the substrate and below the formable control terminals of the formable bit line selector devices, a plurality of spaced apart global bit lines; patterning the alternating layers of conductive word line layers and insulative layers so as to form spaced apart pillars each having the alternating layers of conductive word lines and insulation, the pillars having respective vertically extending sidewalls; depositing vertically extending films of memory cell forming material on the sidewalls of the pillars; depositing vertically extending films of bit line forming conductive material on sidewalls of the deposited films of memory cell forming material, the bit line forming films also extending horizontally at respective bottoms of the bit line forming films so as to continue one into the next, the respective bottoms of the bit line forming films making electrical coupling with the formable output terminals of corresponding ones of the formable, vertically oriented bit line selector devices respectively disposed below the respective films of memory cell forming material; creating electrically isolating separations between the deposited films of bit line forming conductive material so as to form vertically extending individual bit lines such that each individual bit line is electrically isolated from adjacent other individual bit lines extending vertically along adjacent vertically extending sidewalls of adjacent pillars; and creating electrically isolating separations in the material layers provided for forming the formable, vertically oriented bit line selector devices so as to thereby define individual output terminals for respective ones of the vertically oriented bit line selector devices, the defined individual output terminals respectively connecting to respective ones of the vertically extending individual bit lines formed above the defined individual output terminals. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A method of fabricating a non-volatile data storage device comprising:
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forming above a substrate, a first material layer for defining source regions of vertically oriented, bit line selector devices; forming above the first material layer, a plurality of spaced apart pillars each having alternating layers of conductive word lines and insulation, the pillars having respective vertically extending sidewalls; forming above the first material layer and under the pillars, spaced apart pairs of conductive selector lines that each function as a control terminal for a respective one of the bit line selector devices; forming above the first material layer and between areas occupied by the pillars, a second material layer for defining channel regions of the vertically oriented, bit line selector devices, the defined channel regions being disposed for capacitive coupling to respective adjacent ones of the conductive selector lines; forming above the second material layer and between areas occupied by the pillars, a third material layer for defining drain regions of the vertically oriented, bit line selector devices; forming above the third material layer and between areas occupied by the pillars, an etch stop material; depositing a film of memory cell forming material on the sidewalls of the pillars and above the etch stop material; and depositing a film of bit line forming conductive material on the deposited film of memory cell forming material. - View Dependent Claims (20)
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Specification