Modulated super junction power MOSFET devices
First Claim
Patent Images
1. A super junction power metal oxide semiconductor field effect transistor (MOSFET) device having a channel of first type dopant, said device comprising:
- a plurality of columns, wherein said plurality of columns comprises;
a first plurality of columns comprising second type dopant that is different from said first type dopant, said first plurality of columns formed in a region comprising said first type dopant, each column in said first plurality of columns electrically and physically in contact with a respective base region of said second type dopant that is electrically and physically in contact with a respective contact region of said second type dopant that is physically and electrically in contact with source metal, wherein each column in said first plurality of columns has substantially a same first width along its entire length below its said respective base region; and
a second plurality of columns comprising said second type dopant, said second plurality of columns formed in said region comprising said first type dopant, each column in said second plurality of columns electrically and physically in contact with a respective base region of said second type dopant that is electrically and physically in contact with a respective contact region of said second type dopant that is physically and electrically in contact with said source metal, wherein each column in said second plurality of columns has substantially a same second width along its entire length below its said respective base region;
wherein said first width is different from said second width and wherein said first plurality of columns comprises a plurality of first rows, and wherein said second plurality of columns comprises a plurality of second rows, wherein said first rows are interleaved with said second rows.
2 Assignments
0 Petitions
Accused Products
Abstract
A semiconductor device—e.g., a super junction power MOSFET—includes a number of columns of one type of dopant formed in a region of another type of dopant. Generally speaking, the columns are modulated in some manner. For example, the widths (e.g., diameters) of some columns are greater than the widths of other columns.
-
Citations
13 Claims
-
1. A super junction power metal oxide semiconductor field effect transistor (MOSFET) device having a channel of first type dopant, said device comprising:
-
a plurality of columns, wherein said plurality of columns comprises; a first plurality of columns comprising second type dopant that is different from said first type dopant, said first plurality of columns formed in a region comprising said first type dopant, each column in said first plurality of columns electrically and physically in contact with a respective base region of said second type dopant that is electrically and physically in contact with a respective contact region of said second type dopant that is physically and electrically in contact with source metal, wherein each column in said first plurality of columns has substantially a same first width along its entire length below its said respective base region; and a second plurality of columns comprising said second type dopant, said second plurality of columns formed in said region comprising said first type dopant, each column in said second plurality of columns electrically and physically in contact with a respective base region of said second type dopant that is electrically and physically in contact with a respective contact region of said second type dopant that is physically and electrically in contact with said source metal, wherein each column in said second plurality of columns has substantially a same second width along its entire length below its said respective base region; wherein said first width is different from said second width and wherein said first plurality of columns comprises a plurality of first rows, and wherein said second plurality of columns comprises a plurality of second rows, wherein said first rows are interleaved with said second rows. - View Dependent Claims (2, 3, 4, 5)
-
-
6. A semiconductor device comprising:
-
a substrate comprising a first type dopant; and a super junction structure coupled to said substrate and comprising a plurality of columnar regions, said plurality of columnar regions comprising a first plurality of columnar first regions formed in a third region and a second plurality of columnar second regions formed in said third region, said third region comprising said first type dopant and said columnar first regions and said columnar second regions each comprising second type dopant that is different from said first type dopant; wherein each of said columnar first regions is electrically and physically in contact with a respective base region of said second type dopant that is electrically and physically in contact with a respective contact region of said second type dopant that is physically and electrically in contact with source metal, wherein each of said columnar second regions is electrically and physically in contact with a respective base region of said second type dopant that is electrically and physically in contact with a respective contact region of said second type dopant that is physically and electrically in contact with said source metal, wherein each of said columnar first regions has substantially a same first width along its entire length below its said respective base region, the first width measured orthogonal to the longitudinal axis of said columnar first regions, wherein each of said columnar second regions has substantially a same second width along its entire length below its said respective base region, the second width measured orthogonal to the longitudinal axis of said columnar second regions, and wherein said first width is different from said second width; and wherein said first plurality of columnar first regions comprise a plurality of first rows, and wherein said second plurality of columnar second regions comprise a plurality of second rows, wherein said first rows are interleaved with said second rows. - View Dependent Claims (7, 8, 9)
-
-
10. A semiconductor device comprising a gate, source, and drain, said semiconductor device comprising:
-
a substrate of said first type dopant; and an epitaxial layer coupled to said substrate, said epitaxial layer doped with said first type dopant, said epitaxial layer having formed therein a plurality of columns, wherein said plurality of columns comprises; a first plurality of columns comprising second type dopant that is different from said first type dopant, each column in said first plurality of columns electrically and physically in contact with a respective base region of said second type dopant that is electrically and physically in contact with a respective contact region of said second type dopant that is physically and electrically in contact with source metal, wherein each column in said first plurality of columns has substantially a same first width along its entire length below its said respective base region; and a second plurality of columns comprising said second type dopant, each column in said second plurality of columns electrically and physically in contact with a respective base region of said second type dopant that is electrically and physically in contact with a respective contact region of said second type dopant that is physically and electrically in contact with said source metal, wherein each column in said second plurality of columns has substantially a same second width along its entire length below its said respective base region; wherein said first width is different from said second width and wherein said first plurality of columns comprises a plurality of first rows, and wherein said second plurality of columns comprises a plurality of second rows, wherein said first rows are interleaved with said second rows. - View Dependent Claims (11, 12, 13)
-
Specification