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Method for manufacturing semiconductor device having oxide semiconductor

  • US 9,887,276 B2
  • Filed: 12/16/2013
  • Issued: 02/06/2018
  • Est. Priority Date: 07/03/2009
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device, the method comprising:

  • forming a gate electrode layer, a gate insulating layer, and an oxide semiconductor layer over a substrate, wherein the oxide semiconductor layer includes a channel formation region;

    performing plasma treatment on the oxide semiconductor layer in the presence of a gas containing an oxygen element; and

    forming an oxide insulating film over and in contact with the oxide semiconductor layer,wherein the oxide semiconductor layer is heated at least from the plasma treatment until the formation of the oxide insulating film.

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